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Semiconductor structure and manufacturing method thereof

  • US 10,515,867 B2
  • Filed: 01/24/2018
  • Issued: 12/24/2019
  • Est. Priority Date: 11/14/2017
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a substrate;

    a first die over the substrate;

    a second die over the first die;

    a heat spreader having a sidewall facing toward and proximal to a sidewall of the second die; and

    a thermal interface material (TIM) between the sidewall of the second die and the sidewall of the heat spreader;

    whereinthe TIM is in contact with the sidewall of the second die and the sidewall of the heat spreader, anda thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.

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