Semiconductor structure and manufacturing method thereof

• US 10,515,867 B2
• Filed: 01/24/2018
• Issued: 12/24/2019
• Est. Priority Date: 11/14/2017
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wu, Chi-Hsi, Hung, Wensen, Lin, Tsung-Shu, Ku, Shih-Chang, Chen, Tsung-Yu, Li, Hung-Chi
• Primary Examiner(s): Menz, Laura M
• Application Number:
  US15/878,776
• Publication Number:
  US 20190148261A1
• Time in Patent Office: 699 Days
• CPC Class Codes: H01L 21/4882 Assembly of heatsink parts
• CPC Class Codes: H01L 2224/08 of an individual bonding area
• CPC Class Codes: H01L 2224/08145 the bodies being stacked
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/13184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32 of an individual layer connector
• CPC Class Codes: H01L 2224/321 Disposition
• CPC Class Codes: H01L 2224/32175 the item being metallic
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73251 : on different surfaces
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06568 : the devices decreasing in size, e.g. pyramidical stack
• CPC Class Codes: H01L 2225/06589 : Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/3675 : characterised by the shape of the housing
• CPC Class Codes: H01L 23/3733 : having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures H01L23/3732, H01L23/3737 take precedence
• CPC Class Codes: H01L 23/3736 : Metallic materials H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence
• CPC Class Codes: H01L 24/08 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/18161 : of a flip chip
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate

Abstract

The present disclosure provides a semiconductor structure including a substrate, a first die over the substrate, a second die over the first die, a heat spreader having a sidewall facing toward and proximal to a sidewall of the first die, and a thermal interface material (TIM) between the sidewall of the first die and the sidewall of the heat spreader. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.

Claims

1. A semiconductor structure, comprising:

a substrate;

a first die over the substrate;

a second die over the first die;

a heat spreader having a sidewall facing toward and proximal to a sidewall of the second die; and

a thermal interface material (TIM) between the sidewall of the second die and the sidewall of the heat spreader;

wherein

the TIM is in contact with the sidewall of the second die and the sidewall of the heat spreader, and

a thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.

2. The semiconductor structure of claim 1, wherein the TIM is between a sidewall of the first die and the sidewall of the heat spreader.

3. The semiconductor structure of claim 1, wherein the heat spreader has a surface facing toward and proximal to a surface of the second die, the surface of the second die facing away from the substrate.

4. The semiconductor structure of claim 3, wherein the TIM is between the surface of the second die and the surface of the heat spreader.

5. The semiconductor structure of claim 1, wherein a surface of the second die is exposed from the heat spreader, the surface of the second die facing away from the substrate.

6. The semiconductor structure of claim 1, wherein the first die has a surface exposed from the second die from a top view perspective, and the heat spreader has a surface facing toward and proximal to the exposed surface of the first die.

7. The semiconductor structure of claim 6, wherein the TIM between the exposed surface of the first die and the surface of the heat spreader.

8. The semiconductor structure of claim 1, wherein a thermal conductivity of the heat spreader is between about 150 W/mK and about 450 W/mK.

9. The semiconductor structure of claim 1, wherein a thermal conductivity of the heat spreader is between about 370 W/mK and about 420 W/mK.

10. The semiconductor structure of claim 1, wherein the heat spreader comprises a material selected from a group consisting of aluminum, copper, copper alloy, copper tungsten, aluminum-silicon-carbide, graphite, and aluminum silicon carbide composite.

11. The semiconductor structure of claim 1, wherein a thermal conductivity of the TIM is between about 1 W/mK and about 10 W/mK.

12. The semiconductor structure of claim 1, wherein a thermal conductivity of the TIM is between about 3 W/mK and about 6 W/mK.

13. The semiconductor structure of claim 1, wherein a ratio of a thermal conductivity of the heat spreader to a thermal conductivity of the TIM is between about 15 and about 450.

14. The semiconductor structure of claim 1, wherein a ratio of a thermal conductivity of the heat spreader to a thermal conductivity of the TIM is between about 60 and about 140.

15. The semiconductor structure of claim 1, wherein the TIM surrounds the first die, and the heat spreader surrounds the TIM.

16. A semiconductor structure, comprising:

a substrate;

a die cube disposed over the substrate, and including a plurality of dies;

a heat spreader disposed over the substrate, surrounding and separated from the die stack; and

a thermal interface material (TIM) disposed between the die cube and the heat spreader,

wherein the TIM is in contact with a sidewall of a topmost die of the plurality of dies of the die cube and the heat spreader, and a thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.

17. The semiconductor structure of claim 16, wherein sidewalls of the plurality of dies are aligned and in contact with the TIM.