Semiconductor structure and manufacturing method thereof
First Claim
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1. A semiconductor structure, comprising:
- a substrate;
a first die over the substrate;
a second die over the first die;
a heat spreader having a sidewall facing toward and proximal to a sidewall of the second die; and
a thermal interface material (TIM) between the sidewall of the second die and the sidewall of the heat spreader;
whereinthe TIM is in contact with the sidewall of the second die and the sidewall of the heat spreader, anda thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.
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Abstract
The present disclosure provides a semiconductor structure including a substrate, a first die over the substrate, a second die over the first die, a heat spreader having a sidewall facing toward and proximal to a sidewall of the first die, and a thermal interface material (TIM) between the sidewall of the first die and the sidewall of the heat spreader. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.
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Citations
17 Claims
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1. A semiconductor structure, comprising:
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a substrate; a first die over the substrate; a second die over the first die; a heat spreader having a sidewall facing toward and proximal to a sidewall of the second die; and a thermal interface material (TIM) between the sidewall of the second die and the sidewall of the heat spreader;
whereinthe TIM is in contact with the sidewall of the second die and the sidewall of the heat spreader, and a thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor structure, comprising:
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a substrate; a die cube disposed over the substrate, and including a plurality of dies; a heat spreader disposed over the substrate, surrounding and separated from the die stack; and a thermal interface material (TIM) disposed between the die cube and the heat spreader, wherein the TIM is in contact with a sidewall of a topmost die of the plurality of dies of the die cube and the heat spreader, and a thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM. - View Dependent Claims (17)
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Specification