Semiconductor device and a method for fabricating the same

• US 10,515,961 B2
• Filed: 03/29/2019
• Issued: 12/24/2019
• Est. Priority Date: 01/29/2016
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chen, Fang, Liaw, Jhon Jhy, Liang, Min-Chang
• Primary Examiner(s): Enad, Christine A
• Application Number:
  US16/370,330
• Publication Number:
  US 20190229119A1
• Time in Patent Office: 270 Days
• CPC Class Codes: H01L 21/76895 Local interconnects; Local pads, as exemplified by patent document EP0896365
• CPC Class Codes: H01L 21/76897 Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step self-aligned silicidation on field effect transistors H01L29/665
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 21/823475 interconnection or wiring or contact manufacturing related aspects
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 27/0886 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/41791 for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/495 the conductor material next to the insulator being a simple metal, e.g. W, Mo H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/4975 being a silicide layer, e.g. TiSi2
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A semiconductor device includes a fin field effect transistor. The semiconductor device includes a first gate electrode, a first source/drain (S/D) region disposed adjacent to the first gate electrode, a first S/D contact disposed on the first S/D region, a first spacer layer disposed between the first gate electrode and the first S/D region, a first contact layer in contact with the first gate electrode and the first S/D contact, and a first wiring layer integrally formed with the first contact layer. There is no interface between the first contact layer and the first wiring layer in a cross sectional view, and the first contact layer has a smaller area than the first wiring layer in plan view.

Claims

1. A semiconductor device, comprising:

a fin structure;

a first gate electrode disposed over a first part of the fin structure and between first gate sidewall spacers made of an insulating material;

a second gate electrode disposed over a second part of the fin structure and between second gate sidewall spacers made of the insulating material;

a first source/drain (S/D) region disposed adjacent to the first gate electrode;

a second S/D region disposed adjacent to the second gate electrode;

a first S/D contact made of a first conductive material and disposed on the first S/D region;

a second S/D contact made of the first conductive material and disposed on the second S/D region;

a first contact layer made of a second conductive material and being in contact with the first gate electrode and the first S/D contact;

a second contact layer made of the second conductive material and being in contact with the second gate electrode; and

a third contact layer made of the second conductive material and disposed on the second S/D region, wherein;

the third contact layer is disposed above the second part of the fin structure, and

the second contact layer is not disposed above the fin structure.

2. The semiconductor device of claim 1, wherein the second contact layer is disposed above an isolation insulating layer from which the fin structure protrudes.

3. The semiconductor device of claim 1, wherein the first contact layer is disposed above the first part of the fin structure.

4. The semiconductor device of claim 1, wherein the first contact layer is disposed above an isolation insulating layer from which the fin structure protrudes.

5. The semiconductor device of claim 1, wherein the second contact layer is a contact layer closest to the third contact layer in a plan view.

6. The semiconductor device of claim 1, wherein the first S/D contact is not in direct contact with the first gate electrode.

7. The semiconductor device of claim 6, wherein the first contact layer is in direct contact with the first gate electrode and an uppermost portion and a side face of the first S/D contact.

8. The semiconductor device of claim 1, further comprising a first spacer layer made of an insulating material and disposed between one of the first gate sidewall spacers and the first S/D contact,

wherein a bottom surface of the first contact layer is in contact with an upper surface of the first spacer layer and an upper surface of the one of the first gate sidewall spacers.

9. The semiconductor device of claim 1, further comprising a first gate cap insulating layer formed over the first gate electrode,

wherein a side surface of the first contact layer is in contact with the first gate cap insulating layer.

10. The semiconductor device of claim 9, further comprising:

a first interlayer dielectric layer disposed over at least the first cap insulating layer; and

a first wiring layer integrally formed with the first contact layer, wherein;

the first contact layer has a smaller area than the first wiring layer in plan view,

the first wiring layer is embedded in an upper portion of the first interlayer dielectric layer, and

the first contact layer penetrates a bottom portion of the first interlayer dielectric layer and the first gate cap insulating layer.

11. The semiconductor device of claim 10, further comprising:

a second gate cap insulating layer formed over the second gate electrode; and

a second wiring layer integrally formed with the second contact layer, wherein;

the second wiring layer is embedded in the upper portion of the first interlayer dielectric layer, and

the second contact layer penetrates the bottom portion of the first interlayer dielectric layer and the second gate cap insulating layer.

12. The semiconductor device of claim 11, further comprising:

a third wiring layer integrally formed with the third contact layer, wherein;

there is no interface between the third contact layer and the third wiring layer in a cross sectional view,

the third wiring layer is embedded in the upper portion of the first interlayer dielectric layer, and

the third contact layer penetrates the bottom portion of the first interlayer dielectric layer.

13. The semiconductor device of claim 1, wherein:

the first conductive material includes at least one conductive material selected the group consisting of Co, Ni, W and Mo, and

the second conductive material includes at least one conductive material selected the group consisting of TiN, Ti, Cu and Al.

14. A semiconductor device, comprising:

a fin structure;

a first gate electrode disposed over a first part of the fin structure and between first gate sidewall spacers made of an insulating material;

a second gate electrode disposed over a second part of the fin structure and between second gate sidewall spacers made of an insulating material;

a first gate contact layer made of a first conductive material and being disposed on the first gate electrode;

a second gate contact layer made of the first conductive material and being disposed on the second gate electrode;

a first source/drain (S/D) region;

a second source/drain (S/D) region;

a first S/D contact made of a second conductive material and being disposed on the first S/D region;

a second S/D contact made of the second conductive material and being disposed on the second S/D region;

a first contact layer made of a third conductive material and being in contact with the first gate contact layer and the first S/D contact;

a second contact layer made of the third conductive material and being in contact with the second gate contact layer; and

a third contact layer made of the third conductive material and being in contact with the second S/D contact, wherein;

the third contact layer is disposed above the second part of the fin structure, and

the second contact layer is disposed above an isolation insulating layer from which the fin structure protrudes.

15. The semiconductor device of claim 14, wherein:

the first contact layer is in direct contact with an uppermost portion of the first gate contact layer and an uppermost potion of the first S/D contact, and

the first S/D contact is not in direct contact with the first gate electrode.

16. The semiconductor device of claim 14, wherein the first contact layer is disposed above the first part of the fin structure.

17. The semiconductor device of claim 14, wherein the first contact layer is disposed above the isolation insulating layer.

18. The semiconductor device of claim 14, wherein the second contact layer is a contact layer closest to the third contact layer in a plan view.

19. A semiconductor device, comprising:

a fin structure;

a first gate electrode disposed over the fin structure;

a second gate electrode disposed over the fin structure;

a first source/drain (S/D) region disposed on the fin structure;

a second source/drain (S/D) region disposed on the fin structure;

a first S/D contact disposed on the first S/D region;

a second S/D contact disposed on the second S/D region;

a first contact layer in contact with the first gate electrode and the first S/D contact;

a second contact layer in contact with the second gate electrode; and

a third contact layer in contact with the second S/D contact, wherein;

the third contact layer is disposed above the fin structure,

the second contact layer is disposed above an isolation insulating layer from which the fin structure protrudes, and

the second contact layer is a closest contact layer to the third contact layer in pan view.