Method to induce strain in finFET channels from an adjacent region

• US 10,515,965 B2
• Filed: 07/13/2018
• Issued: 12/24/2019
• Est. Priority Date: 09/16/2013
• Status: Active Grant

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Inventors: Morin, Pierre, Loubet, Nicolas
• Primary Examiner(s): Dickey, Thomas L
• Application Number:
  US16/035,441
• Publication Number:
  US 20180331106A1
• Time in Patent Office: 529 Days
• CPC Class Codes: H01L 27/0924 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/16 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/165 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/66636 with source or drain recessed by etching or first recessed by etching and then refilled
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7843 the means being an applied insulating layer
• CPC Class Codes: H01L 29/7848 the means being located in the source/drain region, e.g. SiGe source and drain
• CPC Class Codes: H01L 29/7849 the means being provided under the channel
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

Claims

1. A device, comprising:

a substrate having a first surface and a second surface;

a base structure of a first material on the first surface of the substrate;

a fin structure of a second material on the base structure, the first material being different than the second material, the fin structure having a first surface on the base structure and a second surface opposite the first surface;

a constraining material on the base structure and the fin structure, the constraining material having a first surface on the substrate and a second surface opposite the first surface, the second surface of the constraining material being between the first and second surfaces of the fin structure; and

an insulating layer on the second surface of the substrate.

2. The device of claim 1, wherein the first surface of the substrate is spaced apart from the second surface of the substrate, the constraining material being on the second surface of the substrate.

3. The device of claim 2, wherein the substrate has a third surface that is transverse to the first surface of the substrate, and the constraining material is on the third surface of the substrate.

4. The device of claim 1, wherein the insulating layer is adjacent to the constraining material.

5. The device of claim 1, wherein the insulating layer has a first height and the constraining material has a second height, the first height being greater than the second height.

6. A device, comprising:

a substrate;

a first base structure of a first material;

a second base structure of a second material that is different than the first material;

a first fin structure of a third material that is different than the first material and the second material, the first base structure being between the first fin structure and the substrate;

a second fin structure of the third material, the second base structure being between the second fin structure and the substrate;

a first constraining structure and a second constraining structure on the first base structure and the second base structure, respectively; and

an insulating layer adjacent to the first and second constraining structures on the substrate.

7. The device of claim 6, wherein the first fin structure has a first surface on the first base structure and a second surface opposite the first surface, and the first constraining structure has a first surface on the substrate and a second surface opposite the first surface, the second surface of the first constraining structure being between the first and second surfaces of the first fin structure.

8. The device of claim 6, wherein the substrate has a raised portion that has a first surface and extends above a second surface of the substrate, the first base structure being on the first surface of the raised portion, the first and second constraining structures being on the second surface of the substrate.

9. The device of claim 8, wherein the substrate has a third surface that is transverse to the first surface of the substrate, and the first constraining structure being on the third surface of the substrate.

10. The device of claim 8, wherein the insulating layer is on the second surface of the substrate.

11. The device of claim 6, wherein the first base structure has a first height and the first constraining structure has a second height, the first height being less than the second height.

12. The device of claim 11, wherein the second base structure has a third height and the second constraining structure has a fourth height, the third height being less than the fourth height.

13. The device of claim 6, wherein the insulating layer has a first height, the first constraining structure has a second height, and the second constraining structure has a third height, the first height being greater than the second height and the third height.

14. The device of claim 6, further including a dielectric layer between the insulating layer and the substrate.

15. The device of claim 14, wherein the dielectric layer is between the insulating layer and the first constraining structure.

16. A device comprising:

a substrate;

a base structure of a first material on the substrate;

a fin structure of a second material on the base structure, the second material being different than the first material;

a constraining material on the base structure;

a dielectric layer on the constraining material and the substrate; and

an insulating layer on the dielectric layer.

17. The device of claim 16, wherein the substrate has a first surface and a second surface that is spaced apart from the first surface, the base structure being on the first surface of the substrate.

18. The device of claim 17, wherein the constraining material and the dielectric layer are on the second surface of the substrate.

19. The device of claim 16, wherein:

the base structure has a first surface on the substrate and a second surface opposite the first surface; and

the constraining material has a first surface on the substrate and a second surface opposite the first surface, the second surface of the constraining material being between the first surface and the second surface of the base structure.

20. The device of claim 16, wherein:

the constraining material has a first surface on the substrate and a second surface opposite the first surface, the dielectric layer has a first surface on the substrate and a second surface opposite the first surface, the second surface of the constraining material and the second surface of the dielectric layer being coplanar.