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Semiconductor device and manufacturing method thereof

  • US 10,515,969 B2
  • Filed: 11/17/2016
  • Issued: 12/24/2019
  • Est. Priority Date: 11/17/2016
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate having a write portion and a read portion, wherein the write portion includes a first well and a second well that is spaced from the first well and that has the same conductivity type as the first well;

    a first transistor disposed on the first well of the write portion of the substrate;

    a second transistor disposed on the read portion of the substrate, wherein a gate of the first transistor and a gate of the second transistor are integrally formed, and the first transistor and the second transistor have different threshold voltages;

    third and fourth transistors disposed on the second well of the write portion of the substrate, wherein the first and third transistors have the same threshold voltage and the third and fourth transistors have the same channel doping concentration, wherein the fourth transistor comprises;

    an active region; and

    a gate disposed on the active region of the fourth transistor and separated from the gates of the first and second transistors; and

    a fifth transistor disposed on the first well of the write region of the substrate, wherein the fifth transistor has a channel doping concentration lower than a channel doping concentration of the first transistor.

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