Semiconductor structure and manufacturing method thereof

• US 10,515,991 B2
• Filed: 04/17/2015
• Issued: 12/24/2019
• Est. Priority Date: 04/17/2015
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Huang, Zen-Fong, Chien, Volume, Chang, Su-Hua
• Primary Examiner(s): Campbell, Shaun M
• Assistant Examiner(s): Chi, Suberr L
• Application Number:
  US14/689,968
• Publication Number:
  US 20160307950A1
• Time in Patent Office: 1,712 Days
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14629 Reflectors
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

A semiconductor structure includes a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation, a barrier layer disposed over the second side of the substrate, a color filter disposed over the barrier layer, and a grid surrounding the color filter and disposed over the barrier layer, wherein the barrier layer is configured to absorb or reflect non-visible light in the electromagnetic radiation, and the barrier layer is disposed between the grid and the substrate.

Claims

1. A semiconductor structure, comprising:

a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation;

a barrier layer disposed over the second side of the substrate;

a grid disposed over the barrier layer;

a first color filter disposed over the barrier layer and laterally surrounded by and contacting the grid;

a second color filter disposed over the substrate and laterally surrounded by and contacting the grid, the second color filter also laterally surrounded by the barrier layer; and

a dielectric layer disposed between the barrier layer and the substrate,

wherein the barrier layer comprises an upper surface overlapping the grid and an entirety of the first color filter and a bottom surface substantially level with a bottom surface of the second color filter, and

wherein the dielectric layer comprises a first portion overlapping an entirety of a bottom surface of the first color filter and a second portion overlapping an entirety of a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer.

2. The semiconductor structure of claim 1, wherein the first color filter and the second color filter are configured to allow visible light and non-visible light, respectively, in the electromagnetic radiation to pass through.

3. The semiconductor structure of claim 1, wherein the barrier layer includes nitride and the dielectric layer is formed of a high-k dielectric material.

4. The semiconductor structure of claim 1, wherein the barrier layer defines a boundary of the second color filter.

5. The semiconductor structure of claim 1, wherein the barrier layer includes silicon oxide or silicon carbide.

6. The semiconductor structure of claim 1, wherein the second color filter is disposed over the second side of the substrate.

7. The semiconductor structure of claim 1, wherein the grid comprises an upper surface level with a top surface of the first color filter and a bottom surface facing the barrier layer, and the grid is formed of a same material from the upper surface to the bottom surface of the grid.

8. The semiconductor structure of claim 7, wherein the material of the grid is a metallic material.

9. The semiconductor structure of claim 1, wherein the substrate includes a photosensitive diode configured to generate a signal in accordance with an intensity or brightness of the electromagnetic radiation that impinges on the photosensitive diode, and the dielectric layer is in contact with the substrate and the barrier layer.