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Semiconductor structure and manufacturing method thereof

  • US 10,515,991 B2
  • Filed: 04/17/2015
  • Issued: 12/24/2019
  • Est. Priority Date: 04/17/2015
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation;

    a barrier layer disposed over the second side of the substrate;

    a grid disposed over the barrier layer;

    a first color filter disposed over the barrier layer and laterally surrounded by and contacting the grid;

    a second color filter disposed over the substrate and laterally surrounded by and contacting the grid, the second color filter also laterally surrounded by the barrier layer; and

    a dielectric layer disposed between the barrier layer and the substrate,wherein the barrier layer comprises an upper surface overlapping the grid and an entirety of the first color filter and a bottom surface substantially level with a bottom surface of the second color filter, andwherein the dielectric layer comprises a first portion overlapping an entirety of a bottom surface of the first color filter and a second portion overlapping an entirety of a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer.

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