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Method for forming stressor, semiconductor device having stressor, and method for forming the same

  • US 10,516,050 B2
  • Filed: 03/09/2017
  • Issued: 12/24/2019
  • Est. Priority Date: 07/29/2016
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising:

  • forming a gate structure comprising;

    forming a semiconductor fin on a substrate;

    forming a gate insulating layer to cover the semiconductor fin; and

    forming a gate electrode layer to cover the gate insulating layer;

    forming a first stressor in the substrate by an ion beam, wherein the first stressor is formed on one side of the semiconductor fin;

    forming a second stressor in the substrate on another side of the semiconductor fin opposite to the first stressor with respect to the semiconductor fin; and

    forming source and drain regions on opposite sides of the gate structure, wherein the first stressor and the second stressor are under the gate structure.

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