Method for forming stressor, semiconductor device having stressor, and method for forming the same
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising:
- forming a gate structure comprising;
forming a semiconductor fin on a substrate;
forming a gate insulating layer to cover the semiconductor fin; and
forming a gate electrode layer to cover the gate insulating layer;
forming a first stressor in the substrate by an ion beam, wherein the first stressor is formed on one side of the semiconductor fin;
forming a second stressor in the substrate on another side of the semiconductor fin opposite to the first stressor with respect to the semiconductor fin; and
forming source and drain regions on opposite sides of the gate structure, wherein the first stressor and the second stressor are under the gate structure.
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Abstract
A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.
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Citations
20 Claims
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1. A method for manufacturing a semiconductor device, the method comprising:
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forming a gate structure comprising; forming a semiconductor fin on a substrate; forming a gate insulating layer to cover the semiconductor fin; and forming a gate electrode layer to cover the gate insulating layer; forming a first stressor in the substrate by an ion beam, wherein the first stressor is formed on one side of the semiconductor fin; forming a second stressor in the substrate on another side of the semiconductor fin opposite to the first stressor with respect to the semiconductor fin; and forming source and drain regions on opposite sides of the gate structure, wherein the first stressor and the second stressor are under the gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 13, 14, 15)
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10. A method for forming a nanowire on a semiconductor substrate, the method comprising:
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forming a mask layer on the semiconductor substrate; applying ion current on a region of the mask layer, such that ions of the ion current bombard the region of the mask layer to form an opening in the mask layer, wherein the ions settle in a region in the semiconductor substrate so as to form a stressor; and growing the nanowire on a portion of the substrate exposed by the opening of the mask layer. - View Dependent Claims (11, 12)
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16. A method for manufacturing a semiconductor device including a first transistor and a second transistor, the method comprising:
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sequentially forming first and second stressors in a substrate; forming a first gate insulating layer and a first gate electrode for the first transistor over the first stressor, and a second gate insulating layer and a second gate electrode for the second transistor over the second stressor; and forming a first source region and a first drain region for the first transistor on opposite sides of the first gate insulating layer and the first gate electrode, and a second source region and a second drain region for the second transistor on opposite sides of the second gate insulating layer and the second gate electrode, wherein the first transistor and the second transistor are N-type transistors, or the first transistor and the second transistor are P-type transistors. - View Dependent Claims (17, 18, 19, 20)
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Specification