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Semiconductor device and manufacturing method thereof

  • US 10,516,056 B2
  • Filed: 05/22/2018
  • Issued: 12/24/2019
  • Est. Priority Date: 11/30/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • channel layers disposed and vertically arranged over a fin structure;

    a source/drain region disposed over the fin structure;

    a gate dielectric layer disposed on and wrapping each of the channel layers; and

    a gate electrode layer disposed on the gate dielectric layer and wrapping each of the channel layers, wherein;

    each of the channel layers includes a first semiconductor wire made of a first semiconductor material,the source/drain region includes second semiconductor wires made of a second semiconductor material different from the first semiconductor material, andeach of the second semiconductor wires in the source/drain regions is wrapped around by a third semiconductor material.

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