Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising a transistor, the transistor comprising:
- a gate electrode over a substrate;
a gate insulating layer over the gate electrode;
a multilayer film over the gate insulating layer;
a pair of electrodes in electrical contact with the multilayer film;
an oxide insulating layer including silicon over the multilayer film and the pair of electrodes; and
a nitride insulating layer including silicon over the oxide insulating layer,wherein the multilayer film includes an oxide semiconductor layer and an oxide layer over the oxide semiconductor layer,wherein each of the oxide semiconductor layer and the oxide layer contains a crystal grain with a size of 0.1 nm and less than or equal to 10 nm,wherein each of the oxide semiconductor layer and the oxide layer includes In-M-Zn oxide,wherein the M represents Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf, andwherein a proportion of M atoms in the oxide layer is higher than a proportion of M atoms in the oxide semiconductor layer.
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Accused Products
Abstract
In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
138 Citations
18 Claims
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1. A semiconductor device comprising a transistor, the transistor comprising:
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a gate electrode over a substrate; a gate insulating layer over the gate electrode; a multilayer film over the gate insulating layer; a pair of electrodes in electrical contact with the multilayer film; an oxide insulating layer including silicon over the multilayer film and the pair of electrodes; and a nitride insulating layer including silicon over the oxide insulating layer, wherein the multilayer film includes an oxide semiconductor layer and an oxide layer over the oxide semiconductor layer, wherein each of the oxide semiconductor layer and the oxide layer contains a crystal grain with a size of 0.1 nm and less than or equal to 10 nm, wherein each of the oxide semiconductor layer and the oxide layer includes In-M-Zn oxide, wherein the M represents Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf, and wherein a proportion of M atoms in the oxide layer is higher than a proportion of M atoms in the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising a transistor, the transistor comprising:
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a gate electrode over a substrate; a gate insulating layer over the gate electrode; a multilayer film over the gate insulating layer; a pair of electrodes over and in electrical contact with the multilayer film; an oxide insulating layer including silicon over the multilayer film and the pair of electrodes; and a nitride insulating layer including silicon over the oxide insulating layer, wherein the multilayer film includes an oxide semiconductor layer and an oxide layer over the oxide semiconductor layer, wherein each of the oxide semiconductor layer and the oxide layer contains a crystal grain with a size of 0.1 nm and less than or equal to 10 nm, wherein the oxide layer has a first region overlapped by one of the pair of electrodes and a second region between the pair of electrodes and thinner than the first region, wherein each of the oxide semiconductor layer and the oxide layer includes In-M-Zn oxide, wherein the M represents Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf, and wherein a proportion of M atoms in the oxide layer is higher than a proportion of M atoms in the oxide semiconductor layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification