Light emitting diode module for surface mount technology and method of manufacturing the same

• US 10,516,083 B2
• Filed: 02/04/2019
• Issued: 12/24/2019
• Est. Priority Date: 07/02/2012
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Chae, Jong Hyeon, Jang, Jong Min, Roh, Won Young, Suh, Dae Woong, Kang, Min Woo, Lee, Joon Sub, Kim, Hyun A., Kim, Kyoung Wan, Kim, Chang Yeon
• Primary Examiner(s): Coleman, William
• Application Number:
  US16/266,717
• Publication Number:
  US 20190189867A1
• Time in Patent Office: 323 Days
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05173 Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/0518 Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05669 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05671 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/0568 : Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/06051 : Bonding areas having different shapes
• CPC Class Codes: H01L 2224/0616 : Random array, i.e. array with no symmetry
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/293 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32227 : the layer connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/3316 : Random layout, i.e. layout with no symmetry
• CPC Class Codes: H01L 2224/83399 : Material
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 24/00 : Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/053 : Oxides composed of metals from groups of the periodic table
• CPC Class Codes: H01L 2924/0542 : 12th Group
• CPC Class Codes: H01L 2933/0016 : relating to electrodes
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 : Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/508 : having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

Claims

1. A light emitting diode (LED) comprising:

a substrate;

a stacked structure including a first semiconductor layer, an active layer formed over the first semiconductor layer, and a second semiconductor layer formed over the active layer;

an insulation layer formed over the stacked structure and shaped to have a plurality of holes above the stacked structure;

a conductive metal layer disposed over the insulation layer and being in contact with the first semiconductor layer; and

an ohmic contact layer in contact with the second semiconductor layer under the insulation layer,

wherein the second semiconductor layer and the active layer are shaped to expose outer portions of the first semiconductor layer, the outer portions located adjacent to opposing edges of the first semiconductor layer,

wherein the insulation layer covers side surfaces of the second semiconductor layer and the active layer and exposes the outer portions of the first semiconductor layer, and

wherein the conductive metal layer is in contact with the exposed outer portions of the first semiconductor layer adjacent to the opposing edges of the first semiconductor layer.

2. The LED of claim 1, wherein the second semiconductor layer and the active layer are further shaped to expose inner portions of the first semiconductor layer, the inner portions located between the opposing edges of the first semiconductor layer,

wherein the second semiconductor layer and the active layer are interposed between one of the inner portions of the first semiconductor layer and one of the opposing edges of the first semiconductor layer,

wherein the insulation layer further exposes the inner portions of the first semiconductor layer, and

wherein the conductive metal layer further is in contact with the inner portions of the first semiconductor layer.

3. The LED of claim 1, wherein the ohmic contact layer comprises a conductive oxide layer.

4. The LED of claim 1, wherein the conductive metal layer includes a contact layer and a reflection layer.

5. The LED of claim 1, wherein the stacked structure has a side surface inclined with respect to a top surface of the substrate.

6. The LED of claim 1, wherein the first semiconductor covers an entire top surface of the substrate.

7. The LED of claim 1, further comprising:

a first pad electrically connected to the conductive metal layer; and

a second pad electrically connected to the ohmic metal layer.

8. The LED of claim 1, further comprising:

an upper insulation layer over which the first and second pads are disposed,

wherein the upper insulation layer has openings for allowing electrical connections of the first and second pads.

9. The LED of claim 1, wherein the insulation layer includes a stack structure including dielectric materials having different refractive indexes from each other.

10. The LED of claim 2, wherein the exposed inner portions are in a stripe or a hole shape.

11. The LED of claim 3, wherein a thickness of the ohmic contact layer is within 0.1 nm to 20 nm.

12. The LED of claim 3, wherein the conductive oxide layer includes indium tin oxide or zinc oxide.

13. The LED of claim 3, further comprising:

a reflective metal layer formed over the ohmic contact layer.

14. The LED of claim 13, wherein the reflective metal layer comprises at least one of Al, Al alloy, Ag or Ag alloy.

15. The LED of claim 13, further comprising:

an additional insulation layer covering the stacked structure and shaped to expose the reflective metal layer.

16. The LED of claim 4, wherein the contact layer comprises at least one of Ti, Cr or Ni, and wherein the reflection layer comprises Al.

17. The LED of claim 9, wherein the insulation layer includes a distributed Bragg reflector.

18. A light emitting diode (LED) comprising:

a substrate;

a stacked structure including a first semiconductor layer, an active layer formed over the first semiconductor layer, and a second semiconductor layer formed over the active layer;

an first insulation layer formed over the stacked structure and shaped to have a plurality of holes above the stacked structure;

a conductive metal layer disposed over the insulation layer and being in contact with the first semiconductor layer; and

an ohmic contact layer in electrically contact with the second semiconductor layer under the insulation layer,

wherein the second semiconductor layer and the active layer are shaped to expose outer portions of the first semiconductor layer, the outer portions located adjacent to a first edge of the first semiconductor layer,

wherein the conductive metal layer is in contact with the exposed outer portions of the first semiconductor layer adjacent to the first edge of the first semiconductor layer.

19. The LED of claim 18, further comprising:

an second insulation layer covering the conductive metal layer and having an opening exposing the conductive metal layer over the stacked structure.

20. The LED of claim 18, wherein the conductive metal layer includes a contact layer and a reflection layer.

21. The LED of claim 18, further comprising:

a second edge of the first semiconductor layer opposite to the first edge of the first semiconductor layer;

wherein the second semiconductor layer and the active layer are further shaped to expose inner portions of the first semiconductor layer, the inner portions located between the first and second edges of the first semiconductor layer,

wherein the second semiconductor layer and the active layer are interposed between one of the inner portions of the first semiconductor layer and one the first and second edges of the first semiconductor layer, and

wherein the conductive metal layer further contacts to the inner portions of the first semiconductor layer.

22. The LED of claim 18, further comprising:

a plurality of mesas each comprising the active layer and the second conductive type semiconductor layer,

wherein the first insulation layer has holes over each of the plurality of mesas.

23. The LED of claim 18, wherein the conductive metal layer covers a portion of the second semiconductor layer.

24. The LED of claim 20, wherein the contact layer comprises at least one of Ti, Cr, or Ni, and wherein the reflection layer comprises Al.