Secure erase for data corruption
First Claim
1. A method comprising:
- determining, at a memory device, that a value stored in a page of a NAND array of the memory device is to be destroyed; and
in response to the determining, destroying the value in the page without destroying any other data in a block containing the page by applying only a pre-programming pulse to memory cells of the page, the pre-programming pulse bringing a voltage level of the memory cells of the page to a predetermined voltage level.
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Accused Products
Abstract
Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn'"'"'t perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.
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Citations
16 Claims
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1. A method comprising:
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determining, at a memory device, that a value stored in a page of a NAND array of the memory device is to be destroyed; and in response to the determining, destroying the value in the page without destroying any other data in a block containing the page by applying only a pre-programming pulse to memory cells of the page, the pre-programming pulse bringing a voltage level of the memory cells of the page to a predetermined voltage level. - View Dependent Claims (2, 3, 4, 5, 14)
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6. A memory device comprising:
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a NAND memory array; a memory controller configured to perform operations comprising; determining that a value stored in a page of the NAND memory array of the memory device is to be destroyed; and in response to the determining, destroying the value in the page without destroying any other data in a block containing the page by applying only a pre-programming pulse to memory cells of the page, the pre-programming pulse bringing a voltage level of the memory cells of the page to a predetermined voltage level. - View Dependent Claims (7, 8, 9, 10, 15)
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11. A non-transitory machine-readable medium, comprising instructions, that when executed by the machine, cause the machine to perform operations comprising:
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determining that a value stored in a page of a NAND array a memory device is to be destroyed; and in response to the determining, destroying the value in the page without destroying any other data in a block containing the page by applying only a pre-programming pulse to memory cells of the page, the pre-programming pulse bringing a voltage level of the memory cells of the page to a predetermined voltage level. - View Dependent Claims (12, 13, 16)
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Specification