Plasma processing device

• US 10,522,372 B2
• Filed: 02/28/2018
• Issued: 12/31/2019
• Est. Priority Date: 09/08/2017
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Inventors: Ohashi, Takashi
• Primary Examiner(s): Dhingra, Rakesh K
• Assistant Examiner(s): Chan, Laureen
• Application Number:
  US15/907,464
• Publication Number:
  US 20190080935A1
• Time in Patent Office: 671 Days
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/24 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/3255 Material
• CPC Class Codes: H01J 37/32816 Pressure
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A plasma processing device includes a stage, a cluster generation machine, and a plasma generation machine. The stage is disposed in a processing chamber. The stage may support a substrate. The cluster generation machine generates cluster gas by clustering process gas. The plasma generation machine generates plasma of at least one of the process gas and the cluster gas in the processing chamber. The plasma generation machine processes the substrate using the generated plasma.

Claims

1. A plasma processing device comprising:

a processing container;

a shower head provided with a plurality of first introducing holes and a plurality of second introducing holes wherein the shower head divides the inside of the processing container into a processing chamber and a diffusion chamber;

wherein the second introducing holes are connected to the diffusion chamber;

a stage disposed in the processing chamber and configured to support a substrate;

a cluster generator configured to generate a cluster gas by clustering a process gas;

a plasma generator configured to generate plasma of at least one of the process gas or the cluster gas in the processing container, and to process the substrate using the generated plasma,

wherein the plasma generator is configured to ionize at least one of the process gas or the cluster gas, and

wherein the stage is arranged as an electrode which draws at least one of the ionized process gas and the cluster gas to a surface of the substrate;

a first gas supplying pipe supplying gas from a first gas cylinder,

wherein the first gas supplying pipe is connected to the cluster generator and then branches into a first cluster gas supplying pipe and a second cluster gas supplying pipe, wherein the first cluster gas supplying pipe and the second cluster gas supplying pipe are physically separated from the diffusion chamber and connected to the first introducing holes;

a second gas supplying pipe supplying gas from a second gas cylinder, wherein the second gas supplying pipe is connected to the diffusion chamber; and

at least one valve provided to each of the first cluster gas supplying pipe and the second cluster gas supplying pipe.

2. The plasma processing device according to claim 1,

wherein the plurality of first introducing holes and the plurality of second introducing holes are two-dimensionally arranged in a principal plane of the shower head, which faces the stage, respectively.

3. The plasma processing device according to claim 2, wherein the plurality of first introducing holes and the plurality of second introducing holes are arranged in concentric regions in the principal plane.

4. The plasma processing device according to claim 3, wherein the concentric regions are alternately arranged to have only the first or the second introducing holes.

5. The plasma processing device according to claim 3, wherein each of the concentric regions has alternately arranged first introducing holes and second introducing holes.

6. The plasma processing device according to claim 2, wherein one of the plurality of first introducing holes or the plurality of second introducing holes is arranged in an outer peripheral region in the principal plane, and the other of the plurality of first introducing holes or the plurality of second introducing holes is arranged in an inner region within the outer region.

7. The plasma processing device according to claim 1, further comprising:

a controller configured to control the plasma processing device such that the cluster gas is introduced to the processing chamber via the first introducing holes and the process gas is introduced to the processing chamber via the second introducing holes, simultaneously.

8. The plasma processing device according to claim 1, wherein the first gas supplying pipe branches into at least the first cluster gas supplying pipe, the second cluster gas supplying pipe and a third cluster gas supplying pipe, and at least one valve is provided to each of the cluster gas supplying pipes.

9. A plasma processing device comprising:

a processing container;

a shower head provided with a plurality of first introducing holes and a plurality of second introducing holes wherein the shower head divides the inside of the processing container into a processing chamber and a diffusion chamber;

wherein the second introducing holes are connected to the diffusion chamber;

a stage disposed in the processing chamber and configured to support a substrate;

a cluster generator configured to generate a cluster gas by clustering a process gas; and

a plasma generator configured to generate plasma of at least one of a process gas or the cluster gas in the processing container, and to process the substrate using the generated plasma,

wherein the plasma generator is configured to ionize at least one of the process gas or the cluster gas, and

wherein the stage is arranged as an electrode which draws at least one of the ionized process gas and the cluster gas to a surface of the substrate;

a first gas supplying pipe supplying gas from a first gas cylinder;

wherein the first gas supplying pipe is connected to the cluster generator and then branches into a plurality of cluster gas supplying pipes, the plurality of cluster gas supplying pipes are physically separated from the diffusion chamber and connected to the first introducing holes; and

a second gas supplying pipe supplying gas from a second gas cylinder is connected to the diffusion chamber;

wherein the first introducing holes are only provided at a peripheral portion of the shower head.

10. The plasma processing device according to claim 9, wherein the first gas supplying pipe branches into at least three cluster gas supplying pipes, and at least one valve provided to each of the cluster gas supplying pipes.

11. The plasma processing device according to claim 9, wherein the plurality of first introducing holes and the plurality of second introducing holes are two-dimensionally arranged in a principal plane of the shower head, which faces the stage, respectively.

12. The plasma processing device according to claim 11, wherein the plurality of first introducing holes and the plurality of second introducing holes are arranged in concentric regions in the principal plane.

13. The plasma processing device according to claim 9, further comprising:

a controller configured to control the plasma processing device such that the cluster gas is introduced to the processing chamber via the first introducing holes and the process gas is introduced to the processing chamber via the second introducing holes, simultaneously.