Plasma processing device
First Claim
Patent Images
1. A plasma processing device comprising:
- a processing container;
a shower head provided with a plurality of first introducing holes and a plurality of second introducing holes wherein the shower head divides the inside of the processing container into a processing chamber and a diffusion chamber;
wherein the second introducing holes are connected to the diffusion chamber;
a stage disposed in the processing chamber and configured to support a substrate;
a cluster generator configured to generate a cluster gas by clustering a process gas;
a plasma generator configured to generate plasma of at least one of the process gas or the cluster gas in the processing container, and to process the substrate using the generated plasma,wherein the plasma generator is configured to ionize at least one of the process gas or the cluster gas, andwherein the stage is arranged as an electrode which draws at least one of the ionized process gas and the cluster gas to a surface of the substrate;
a first gas supplying pipe supplying gas from a first gas cylinder,wherein the first gas supplying pipe is connected to the cluster generator and then branches into a first cluster gas supplying pipe and a second cluster gas supplying pipe, wherein the first cluster gas supplying pipe and the second cluster gas supplying pipe are physically separated from the diffusion chamber and connected to the first introducing holes;
a second gas supplying pipe supplying gas from a second gas cylinder, wherein the second gas supplying pipe is connected to the diffusion chamber; and
at least one valve provided to each of the first cluster gas supplying pipe and the second cluster gas supplying pipe.
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Abstract
A plasma processing device includes a stage, a cluster generation machine, and a plasma generation machine. The stage is disposed in a processing chamber. The stage may support a substrate. The cluster generation machine generates cluster gas by clustering process gas. The plasma generation machine generates plasma of at least one of the process gas and the cluster gas in the processing chamber. The plasma generation machine processes the substrate using the generated plasma.
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Citations
13 Claims
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1. A plasma processing device comprising:
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a processing container; a shower head provided with a plurality of first introducing holes and a plurality of second introducing holes wherein the shower head divides the inside of the processing container into a processing chamber and a diffusion chamber; wherein the second introducing holes are connected to the diffusion chamber; a stage disposed in the processing chamber and configured to support a substrate; a cluster generator configured to generate a cluster gas by clustering a process gas; a plasma generator configured to generate plasma of at least one of the process gas or the cluster gas in the processing container, and to process the substrate using the generated plasma, wherein the plasma generator is configured to ionize at least one of the process gas or the cluster gas, and wherein the stage is arranged as an electrode which draws at least one of the ionized process gas and the cluster gas to a surface of the substrate; a first gas supplying pipe supplying gas from a first gas cylinder, wherein the first gas supplying pipe is connected to the cluster generator and then branches into a first cluster gas supplying pipe and a second cluster gas supplying pipe, wherein the first cluster gas supplying pipe and the second cluster gas supplying pipe are physically separated from the diffusion chamber and connected to the first introducing holes; a second gas supplying pipe supplying gas from a second gas cylinder, wherein the second gas supplying pipe is connected to the diffusion chamber; and at least one valve provided to each of the first cluster gas supplying pipe and the second cluster gas supplying pipe. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A plasma processing device comprising:
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a processing container; a shower head provided with a plurality of first introducing holes and a plurality of second introducing holes wherein the shower head divides the inside of the processing container into a processing chamber and a diffusion chamber; wherein the second introducing holes are connected to the diffusion chamber; a stage disposed in the processing chamber and configured to support a substrate; a cluster generator configured to generate a cluster gas by clustering a process gas; and a plasma generator configured to generate plasma of at least one of a process gas or the cluster gas in the processing container, and to process the substrate using the generated plasma, wherein the plasma generator is configured to ionize at least one of the process gas or the cluster gas, and wherein the stage is arranged as an electrode which draws at least one of the ionized process gas and the cluster gas to a surface of the substrate; a first gas supplying pipe supplying gas from a first gas cylinder; wherein the first gas supplying pipe is connected to the cluster generator and then branches into a plurality of cluster gas supplying pipes, the plurality of cluster gas supplying pipes are physically separated from the diffusion chamber and connected to the first introducing holes; and a second gas supplying pipe supplying gas from a second gas cylinder is connected to the diffusion chamber; wherein the first introducing holes are only provided at a peripheral portion of the shower head. - View Dependent Claims (10, 11, 12, 13)
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Specification