Liquid crystal display device and method for manufacturing the same

• US 10,522,572 B2
• Filed: 03/09/2018
• Issued: 12/31/2019
• Est. Priority Date: 09/13/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Hatano, Kaoru
• Primary Examiner(s): Dudek, James A
• Application Number:
  US15/916,362
• Publication Number:
  US 20180204855A1
• Time in Patent Office: 662 Days
• Field of Search: None
• CPC Class Codes: G02F 1/1333 Constructional arrangements; Manufacturing methodsG02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/1343 Electrodes reflective electrodes G02F1/133553
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136231 for reducing the number of lithographic steps
• CPC Class Codes: G02F 2201/50 Protective arrangements
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.

Claims

1. A semiconductor device comprising:

a support with flexibility;

a base layer over the support;

a transistor over the base layer comprising;

a gate electrode;

a semiconductor layer;

a first insulating layer between the gate electrode and the semiconductor layer;

source and drain electrodes electrically connected to the semiconductor layer; and

a second insulating layer having an opening over and in contact with the source and drain electrodes;

a conductive layer electrically connected to one of the source and drain electrodes through the opening; and

a terminal over the base layer, comprising a wiring and an electrode,

wherein the conductive layer is in contact with a side surface of the semiconductor layer,

wherein the electrode is in contact with a side surface of a second semiconductor layer,

wherein the wiring and the electrode are in contact with each other through a contact hole,

wherein the contact hole is provided to penetrate the first insulating layer, the second insulating layer and the second semiconductor layer,

wherein the wiring includes the same material as the gate electrode,

wherein the electrode includes the same material as the conductive layer, and

wherein the second semiconductor layer includes the same material as the semiconductor layer.

4. The semiconductor device according to claim 1, wherein the base layer is one of a single-layer structure and a layered structure each containing at least one of aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon nitride oxide, silicon oxynitride, and gallium oxide.

6. The semiconductor device according to claim 1, wherein the gate electrode, and the source and drain electrodes separately include at least one of a metal material selected from Mo, Ti, W, Ta, Al, Cu, Cr, Nd, and Sc, and a conductive metal oxide selected from In₂O₃, SnO₂, ZnO, In₂O₃—

SnO₂, and In₂O₃—

ZnO.

8. The semiconductor device according to claim 1, wherein the semiconductor layer comprises an oxide semiconductor containing In, Ga, and Zn.

10. The semiconductor device according to claim 1, wherein the conductive layer includes a light-transmitting conductive material.

12. The semiconductor device according to claim 1, further comprising:

a second opening to penetrate the semiconductor layer, the first insulating layer, and the second insulating layer.

14. The semiconductor device according to claim 12, wherein the conductive layer is in contact with a side surface of each of the first insulating layer, the semiconductor layer, and the second insulating layer in the second opening.

16. The semiconductor device according to claim 1, wherein the conductive layer function as a pixel electrode.

18. A display device comprising the semiconductor device according to claim 1.

2. A semiconductor device comprising:

a support with flexibility;

a base layer over the support;

a transistor over the base layer comprising;

a gate electrode;

a semiconductor layer;

a first insulating layer between the gate electrode and the semiconductor layer;

source and drain electrodes electrically connected to the semiconductor layer; and

a second insulating layer having an opening over and in contact with the source and drain electrodes;

a conductive layer electrically connected to one of the source and drain electrodes through the opening;

a capacitor over the base layer, comprising a capacitor wiring, the semiconductor layer, the first insulating layer, the second insulating layer, and the conductive layer; and

a terminal over the base layer, comprising a wiring and an electrode,

wherein the conductive layer is in contact with a side surface of the semiconductor layer,

wherein the electrode is in contact with a side surface of a second semiconductor layer,

wherein the wiring and the electrode are in contact with each other through a contact hole,

wherein the contact hole is provided to penetrate the first insulating layer, the second insulating layer and the second semiconductor layer,

wherein the wiring includes the same material as the gate electrode,

wherein the electrode includes the same material as the conductive layer, and

wherein the second semiconductor layer includes the same material as the semiconductor layer.

3. The semiconductor device according to claim 2, wherein the capacitor wiring includes a same conductive material as the gate electrode.

5. The semiconductor device according to claim 2, wherein the base layer is one of a single-layer structure and a layered structure each containing at least one of aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon nitride oxide, silicon oxynitride, and a gallium oxide.

7. The semiconductor device according to claim 2, wherein the gate electrode, and the source and drain electrodes separately include at least one of a metal material selected from Mo, Ti, W, Ta, Al, Cu, Cr, Nd, and Sc, and a conductive metal oxide selected from In₂O₃, SnO₂, ZnO, In₂O₃—

SnO₂, and In₂O₃—

ZnO.

9. The semiconductor device according to claim 2, wherein the semiconductor layer comprises an oxide semiconductor containing In, Ga, and Zn.

11. The semiconductor device according to claim 2, wherein the conductive layer includes a light-transmitting conductive material.

13. The semiconductor device according to claim 2, further comprising:

a second opening to penetrate the semiconductor layer, the first insulating layer, and the second insulating layer.

15. The semiconductor device according to claim 13, wherein the conductive layer is in contact with a side surface of each of the first insulating layer, the semiconductor layer, and the second insulating layer in the second opening.

17. The semiconductor device according to claim 2, wherein the conductive layer function as a pixel electrode.

19. A display device comprising the semiconductor device according to claim 2.