Liquid crystal display device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a support with flexibility;
a base layer over the support;
a transistor over the base layer comprising;
a gate electrode;
a semiconductor layer;
a first insulating layer between the gate electrode and the semiconductor layer;
source and drain electrodes electrically connected to the semiconductor layer; and
a second insulating layer having an opening over and in contact with the source and drain electrodes;
a conductive layer electrically connected to one of the source and drain electrodes through the opening; and
a terminal over the base layer, comprising a wiring and an electrode,wherein the conductive layer is in contact with a side surface of the semiconductor layer,wherein the electrode is in contact with a side surface of a second semiconductor layer,wherein the wiring and the electrode are in contact with each other through a contact hole,wherein the contact hole is provided to penetrate the first insulating layer, the second insulating layer and the second semiconductor layer,wherein the wiring includes the same material as the gate electrode,wherein the electrode includes the same material as the conductive layer, andwherein the second semiconductor layer includes the same material as the semiconductor layer.
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Abstract
Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
232 Citations
19 Claims
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1. A semiconductor device comprising:
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a support with flexibility; a base layer over the support; a transistor over the base layer comprising; a gate electrode; a semiconductor layer; a first insulating layer between the gate electrode and the semiconductor layer; source and drain electrodes electrically connected to the semiconductor layer; and a second insulating layer having an opening over and in contact with the source and drain electrodes; a conductive layer electrically connected to one of the source and drain electrodes through the opening; and a terminal over the base layer, comprising a wiring and an electrode, wherein the conductive layer is in contact with a side surface of the semiconductor layer, wherein the electrode is in contact with a side surface of a second semiconductor layer, wherein the wiring and the electrode are in contact with each other through a contact hole, wherein the contact hole is provided to penetrate the first insulating layer, the second insulating layer and the second semiconductor layer, wherein the wiring includes the same material as the gate electrode, wherein the electrode includes the same material as the conductive layer, and wherein the second semiconductor layer includes the same material as the semiconductor layer. - View Dependent Claims (4, 6, 8, 10, 12, 14, 16, 18)
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2. A semiconductor device comprising:
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a support with flexibility; a base layer over the support; a transistor over the base layer comprising; a gate electrode; a semiconductor layer; a first insulating layer between the gate electrode and the semiconductor layer; source and drain electrodes electrically connected to the semiconductor layer; and a second insulating layer having an opening over and in contact with the source and drain electrodes; a conductive layer electrically connected to one of the source and drain electrodes through the opening; a capacitor over the base layer, comprising a capacitor wiring, the semiconductor layer, the first insulating layer, the second insulating layer, and the conductive layer; and a terminal over the base layer, comprising a wiring and an electrode, wherein the conductive layer is in contact with a side surface of the semiconductor layer, wherein the electrode is in contact with a side surface of a second semiconductor layer, wherein the wiring and the electrode are in contact with each other through a contact hole, wherein the contact hole is provided to penetrate the first insulating layer, the second insulating layer and the second semiconductor layer, wherein the wiring includes the same material as the gate electrode, wherein the electrode includes the same material as the conductive layer, and wherein the second semiconductor layer includes the same material as the semiconductor layer. - View Dependent Claims (3, 5, 7, 9, 11, 13, 15, 17, 19)
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Specification