Integrated RF front end system
First Claim
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1. A multi-layer semiconductor package supporting a plurality of devices, the multi-layer semiconductor package comprising:
- a semiconductor wafer including a high-resistivity substrate of a first doping type;
a transistor sub-collector region of a second doping type disposed at least partially below a top plane of the semiconductor wafer, the transistor sub-collector region forming a portion of a transistor;
a low-resistivity epitaxial layer of the second doping type disposed above the top plane of the semiconductor wafer;
a low-resistivity well providing at least one device from the plurality of devices with at least partial electrical isolation from the transistor; and
a trench between the transistor sub-collector region and the low-resistivity well, the trench configured to impede a movement of carriers in the high-resistivity substrate.
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Abstract
Systems and methods are disclosed for integrating functional components of front-end modules for wireless radios. Front-end modules disclosed may be dual-band front-end modules for use in 802.11ac-compliant devices. In certain embodiments, integration of front-end module components on a single die is achieved by implementing a high-resistivity layer or substrate directly underneath, adjacent to, and/or supporting SiGe BiCMOS technology elements.
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Citations
20 Claims
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1. A multi-layer semiconductor package supporting a plurality of devices, the multi-layer semiconductor package comprising:
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a semiconductor wafer including a high-resistivity substrate of a first doping type; a transistor sub-collector region of a second doping type disposed at least partially below a top plane of the semiconductor wafer, the transistor sub-collector region forming a portion of a transistor; a low-resistivity epitaxial layer of the second doping type disposed above the top plane of the semiconductor wafer; a low-resistivity well providing at least one device from the plurality of devices with at least partial electrical isolation from the transistor; and a trench between the transistor sub-collector region and the low-resistivity well, the trench configured to impede a movement of carriers in the high-resistivity substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A multi-layer semiconductor package supporting a plurality of devices, the multi-layer semiconductor package comprising:
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a semiconductor wafer including a high-resistivity substrate of a first doping type; a triple-well transistor disposed at least partially below a top plane of the semiconductor wafer; a low-resistivity epitaxial layer of a second doping type disposed above the top plane of the semiconductor wafer; a low-resistivity well providing at least one device from the plurality of devices with at least partial electrical isolation from the triple-well transistor; and a trench between the triple-well transistor and the low-resistivity well, the trench configured to impede a movement of carriers in the high-resistivity substrate. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method of fabricating a multi-layer semiconductor package supporting a plurality of devices, the method comprising:
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forming a high-resistivity substrate of a first doping type within a semiconductor wafer; forming a triple-well transistor on the high-resistivity substrate, at least a portion of the triple-well transistor disposed below a top plane of the semiconductor wafer; forming a low-resistivity epitaxial layer of a second doping type above the top plane of the semiconductor wafer; implanting a low-resistivity well within the semiconductor wafer, the low-resistivity well providing at least one device from the plurality of devices with at least partial electrical isolation from the triple-well transistor; and etching a trench between the triple-well transistor and the low-resistivity well, the trench configured to impede a movement of carriers in the high-resistivity substrate. - View Dependent Claims (18, 19, 20)
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Specification