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Semiconductor device having a varying length conductive portion between semiconductor regions

  • US 10,522,620 B2
  • Filed: 07/02/2018
  • Issued: 12/31/2019
  • Est. Priority Date: 02/02/2018
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first semiconductor region of a first conductivity type;

    a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;

    a third semiconductor region provided on the second semiconductor region, the third semiconductor region being of the first conductivity type;

    a gate electrode, the gate electrode opposing, in a second direction with a gate insulating layer interposed, the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region, the second direction being perpendicular to a first direction, the first direction being from the second semiconductor region toward the third semiconductor region; and

    a conductive portion electrically connected to the second semiconductor region and the third semiconductor region, the conductive portion including a first portion and a second portion, the first portion being arranged in the second direction with a portion of the second semiconductor region, the second portion being arranged in the second direction with at least a portion of the third semiconductor region, a length in the second direction of the first portion being longer than a length in the second direction of the second portion.

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