Semiconductor device having a varying length conductive portion between semiconductor regions
First Claim
1. A semiconductor device, comprising:
- a first semiconductor region of a first conductivity type;
a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a third semiconductor region provided on the second semiconductor region, the third semiconductor region being of the first conductivity type;
a gate electrode, the gate electrode opposing, in a second direction with a gate insulating layer interposed, the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region, the second direction being perpendicular to a first direction, the first direction being from the second semiconductor region toward the third semiconductor region; and
a conductive portion electrically connected to the second semiconductor region and the third semiconductor region, the conductive portion including a first portion and a second portion, the first portion being arranged in the second direction with a portion of the second semiconductor region, the second portion being arranged in the second direction with at least a portion of the third semiconductor region, a length in the second direction of the first portion being longer than a length in the second direction of the second portion.
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Accused Products
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, and a conductive portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The gate electrode opposes, in a second direction with a gate insulating layer interposed, the third semiconductor region, the second semiconductor region, and the first semiconductor region. The second direction is perpendicular to a first direction from the second semiconductor region toward the third semiconductor region. The conductive portion includes first and second portions. The first and second portions are respectively arranged with the second and third semiconductor regions. A length of the first portion is longer than a length of the second portion.
13 Citations
11 Claims
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1. A semiconductor device, comprising:
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a first semiconductor region of a first conductivity type; a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type; a third semiconductor region provided on the second semiconductor region, the third semiconductor region being of the first conductivity type; a gate electrode, the gate electrode opposing, in a second direction with a gate insulating layer interposed, the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region, the second direction being perpendicular to a first direction, the first direction being from the second semiconductor region toward the third semiconductor region; and a conductive portion electrically connected to the second semiconductor region and the third semiconductor region, the conductive portion including a first portion and a second portion, the first portion being arranged in the second direction with a portion of the second semiconductor region, the second portion being arranged in the second direction with at least a portion of the third semiconductor region, a length in the second direction of the first portion being longer than a length in the second direction of the second portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification