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Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit

  • US 10,522,675 B2
  • Filed: 01/25/2012
  • Issued: 12/31/2019
  • Est. Priority Date: 01/25/2012
  • Status: Active Grant
First Claim
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1. A method of manufacturing an integrated circuit, the method comprising:

  • forming, in a semiconductor die, at least one of a logic circuit and a driver circuit;

    forming, in the semiconductor die, a first field effect transistor structure comprising a first gate electrode structure, a first field electrode structure, a first channel region of a second conductivity type, and a first drain zone section of a first conductivity type opposite the second conductivity type, andforming, in the semiconductor die, a second field effect transistor structure comprising a second gate electrode structure, a second field electrode structure, a second channel region of the second conductivity type, and a second drain zone section of the first conductivity type,whereinthe first gate electrode structure and the second gate electrode structure are formed to be electrically separated from each other,the first field electrode structure and the second field electrode structure are formed to be electrically separated from each other,the first drain zone section and the second drain zone section form a contiguous drain zone of the first conductivity type in the semiconductor die,the second field electrode structure is electrically connected to the second gate electrode structure, to increase a gate-to-drain capacitance of the second field effect transistor structure,the first field electrode structure is electrically coupled to a source electrode of the first field effect transistor structure, to lower a gate-to-drain capacitance of the first field effect transistor structure,the first field effect transistor structure is a power switch configured to switch a load to a power supply and control a load current, andthe second field effect transistor structure is a protection switch configured to respond to fast transient impulses and thereby protect the integrated circuit from destructive currents.

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