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Semiconductor device and method for manufacturing the same

  • US 10,522,692 B2
  • Filed: 05/05/2016
  • Issued: 12/31/2019
  • Est. Priority Date: 12/28/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a transistor comprising;

    an oxide semiconductor film comprising;

    a first region;

    a pair of second regions, the first region located between the pair of second regions; and

    a pair of third regions, the first region and the pair of second regions located between the pair of third regions;

    a gate insulating film over the oxide semiconductor film;

    a gate electrode over the gate insulating film and overlapping with the first region;

    a first electrode electrically connected to the oxide semiconductor film; and

    a second electrode electrically connected to the oxide semiconductor film,wherein the oxide semiconductor film comprises indium, gallium and zinc,wherein the gate electrode, the first electrode, and the second electrode comprise copper,wherein the gate insulating film comprises a fourth region overlapping with the first region and comprises a pair of fifth regions overlapping with at least a part of the pair of second regions,wherein the gate insulating film comprising the fourth region and the pair of fifth regions is one insulating film,wherein the gate insulating film is not in contact with a side surface of the gate electrode, andwherein a conductivity of the pair of third regions is higher than a conductivity of the pair of second regions.

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