Printable inorganic semiconductor structures

• US 10,522,710 B2
• Filed: 07/03/2019
• Issued: 12/31/2019
• Est. Priority Date: 05/15/2015
• Status: Active Grant

• Current Assignee: X Display Company Technology Limited (Sensinnovat BVBA)
• Original Assignee: X-Celeprint Limited
• Inventors: Bower, Christopher, Meitl, Matthew, Gomez, David, Prevatte, Carl, Bonafede, Salvatore
• Primary Examiner(s): Blum, David S
• Application Number:
  US16/502,387
• Publication Number:
  US 20190326470A1
• Time in Patent Office: 181 Days
• Field of Search: 257 76, 257 98
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68322 Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 29/7848 the means being located in the source/drain region, e.g. SiGe source and drain
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Claims

1. A printable inorganic semiconductor structure comprising:

a handle substrate;

an interlayer adhered to the handle substrate and forming an anchor;

a sacrificial layer disposed on or over portions of the interlayer adjacent to the anchor, the interlayer having a different chemical selectivity than the sacrificial layer;

a semiconductor layer disposed on or over at least portions of the sacrificial layer; and

a semiconductor element made from at least the semiconductor layer, the semiconductor element having an exposed substrate side and a handle side opposite the exposed substrate side adjacent to the sacrificial layer, wherein the semiconductor element comprises a first electrical contact on the semiconductor layer, a cantilever extension comprising a portion of the semiconductor layer, and a second electrical contact on the cantilever extension,

wherein the sacrificial layer covers the first and second electrical contacts, the sacrificial layer covers at least a portion of the handle side of the semiconductor element, and a portion of the sacrificial layer is exposed.

2. The printable inorganic semiconductor structure of claim 1, comprising a tether bridging the exposed substrate side of the semiconductor element to the anchor.

3. The printable inorganic semiconductor structure of claim 2, wherein the tether is disposed partially on or over the anchor and partially on or over the semiconductor element.

4. The printable inorganic semiconductor structure of claim 2, wherein the interlayer forms the tether.

5. The printable inorganic semiconductor structure of claim 1, wherein the first and second electrical contacts are disposed on the handle side.

6. The printable inorganic semiconductor structure of claim 1, wherein the first and second electrical contacts are disposed on the substrate side.

7. The printable inorganic semiconductor element of claim 1, wherein the semiconductor element is surrounded by a trench.

8. The printable inorganic semiconductor element of claim 1, wherein the anchor is laterally adjacent to the semiconductor element with respect to the handle substrate.

9. The printable inorganic semiconductor structure of claim 1, wherein the semiconductor element is an integrated circuit.

10. The printable inorganic semiconductor structure of claim 1, wherein the semiconductor element is a light-emitting diode or a laser.

11. The printable inorganic semiconductor structure of claim 1, wherein the semiconductor layer comprises one or more of GaN and doped GaN.

12. The printable inorganic semiconductor structure of claim 1, wherein the interlayer comprises an adhesion layer.

13. The printable inorganic semiconductor structure of claim 1, comprising one or more protrusions disposed on the first electrical contact.

14. The printable inorganic semiconductor structure of claim 1, wherein the first electrical contact and the second electrical contact have a same thickness.

15. The printable inorganic semiconductor structure of claim 1, wherein the first electrical contact has a different thickness than the second electrical contact.

16. The printable inorganic semiconductor structure of claim 1, wherein the first electrical contact and the second electrical contact extend to a common distance from a surface of the semiconductor element.

17. The printable inorganic semiconductor structure of claim 1, wherein the semiconductor structure has at least one of a width from 1-8 μ

m, a length from 5-10 μ

m, and a height from 0.5-3 μ

m.

18. The printable inorganic semiconductor structure of claim 1, wherein the interlayer forms a plurality of anchors separating a plurality of semiconductor elements, each of the plurality of semiconductor elements physically secured to an anchor of the plurality of anchors.

19. A printable inorganic semiconductor structure comprising:

a handle substrate;

an interlayer adhered to the handle substrate and forming an anchor;

a semiconductor layer disposed over at least portions of the interlayer; and

a semiconductor element made from at least a semiconductor layer, the semiconductor element having an exposed substrate side and a handle side opposite the exposed substrate side adjacent to the sacrificial layer, wherein the semiconductor element comprises a first electrical contact on the semiconductor layer, a cantilever extension comprising a portion of the semiconductor layer, and a second electrical contact on the cantilever extension,

wherein the semiconductor element is adjacent to the anchor and a physical separation exists between the semiconductor element and the interlayer.

20. The printable inorganic semiconductor element of claim 19, wherein the semiconductor element is partially released from the handle substrate and physically secured to the anchor by a tether.