Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
First Claim
1. A light-emitting device, comprising:
- an electron blocking layer;
a hole blocking layer, at least a portion of the hole blocking layer having a compressive strain; and
an active layer disposed between the hole blocking layer and the electron blocking layer, the active layer including;
a first barrier layer having a first tensile strain,a second barrier layer having a second tensile strain,a first well layer disposed between the first barrier layer and the second barrier layer,a first unstrained barrier layer,a second unstrained barrier layer, anda second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.
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Accused Products
Abstract
A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer. The active layer may include a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer. The active layer may also include a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.
19 Citations
14 Claims
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1. A light-emitting device, comprising:
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an electron blocking layer; a hole blocking layer, at least a portion of the hole blocking layer having a compressive strain; and an active layer disposed between the hole blocking layer and the electron blocking layer, the active layer including; a first barrier layer having a first tensile strain, a second barrier layer having a second tensile strain, a first well layer disposed between the first barrier layer and the second barrier layer, a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer. - View Dependent Claims (2, 3, 4, 12)
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5. A light-emitting device, comprising:
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an electron blocking layer, at least a portion of the electron blocking layer having a first tensile strain; a hole blocking layer, at least a portion of the hole blocking layer having a compressive strain; and an active layer between the hole blocking layer and the electron blocking layer, the active layer including one or more of a first well structure and one or more of a second well structure, the first well structure including a first barrier layer that has a second tensile strain, a second barrier layer that has a third tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer, and the second well structure including a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer; the electron blocking layer being part of one of an upper confinement layer of the light emitting device and a lower confinement layer of the light-emitting device, an the hole blocking layer being part of the other one of the upper confinement layer of the light emitting device and the lower confinement layer of the light-emitting device. - View Dependent Claims (6, 7, 8, 9, 13)
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10. A light-emitting device, comprising:
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an electron blocking layer; a hole blocking layer, the hole blocking layer including a first unstrained n-type layer and a second n-type layer that has a compressive strain; and an active layer between the hole blocking layer and the electron blocking layer, the active layer including one or more of a first well structure and one or more of a second well structure, the first well structure including a first barrier layer that has a first tensile strain, a second barrier layer that has a second tensile strain, and a well layer disposed between the first barrier layer and the second barrier layer, the first barrier layer and the second barrier layer having a composition represented as (AlxGa(1-x))1-yInyP, where 0.4<
x<
1 and 0<
y<
0.49,the second well structure including a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer; and the first n-type layer being formed of a first material from a system of AlGaInP, the second n-type layer formed of a second material from the system of AlGaInP that has a greater indium-ratio than the first material. - View Dependent Claims (11, 14)
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Specification