Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM devices

• US 10,522,750 B2
• Filed: 02/19/2018
• Issued: 12/31/2019
• Est. Priority Date: 02/19/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yang, Yi, Wang, Yu-Jen
• Primary Examiner(s): Rizkallah, Kimberly N
• Assistant Examiner(s): Belousov, Alexander
• Application Number:
  US15/899,086
• Publication Number:
  US 20190259938A1
• Time in Patent Office: 680 Days
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A metal hard mask layer is deposited on a MTJ stack on a substrate. A hybrid hard mask is formed on the metal hard mask layer, comprising a plurality of spin-on carbon layers alternating with a plurality of spin-on silicon layers wherein a topmost layer of the hybrid hard mask is a silicon layer. A photo resist pattern is formed on the hybrid hard mask. First, the topmost silicon layer of the hybrid hard mask is etched where is it not covered by the photo resist pattern using a first etching chemistry. Second, the hybrid hard mask is etched where it is not covered by the photo resist pattern wherein the photoresist pattern is etched away using a second etch chemistry. Thereafter, the metal hard mask and MTJ stack are etched where they are not covered by the hybrid hard mask to form a MTJ device and overlying top electrode.

Claims

1. A method for etching a magnetic tunneling junction (MTJ) structure, the method comprising:

providing a MTJ stack on a substrate;

depositing a metal hard mask layer having a first thickness on the MTJ stack;

depositing a dielectric hard mask layer on the metal hard mask layer;

forming a hybrid hard mask on the dielectric hard mask layer wherein the hybrid hard mask comprises a plurality of spin-on carbon layers alternating with a plurality of spin-on silicon layers, wherein a topmost layer of the hybrid hard mask is a silicon layer;

forming a photo resist pattern on the hybrid hard mask;

first etching portions of the topmost silicon layer of the hybrid hard mask exposed by the photo resist pattern using a first etching chemistry;

thereafter second etching the plurality of spin-on carbon layers and the plurality of spin-on silicon layers of the hybrid hard mask exposed by the photo resist pattern using a second etching chemistry, wherein the second etching chemistry etches away the photo resist pattern; and

thereafter etching portions of each of the dielectric hard mask, the metal hard mask, and the MTJ stack exposed by the hybrid hard mask to form a MTJ device and overlying top electrode, wherein the metal hard mask layer remaining has a second thickness no less than 80% of the first thickness.

2. The method according to claim 1, wherein the metal hard mask layer includes a material selected from the group consisting of Ta, Ti, TaN, TiN, and combinations thereof, the metal hard mask layer having a thickness of greater than or equal to 60 mm, and wherein after the etching the MTJ stack, the metal hard mask layer forms a top electrode having a thickness of greater than or equal to 50 nm.

3. The method according to claim 1, wherein the dielectric hard mask includes silicon oxynitride having a thickness from about 80 nm to 110 nm.

4. The method according to claim 1, wherein the first etching the topmost second silicon layer includes etching with a plasma including CF₄, CHF₃ or C₄F₈.

5. The method according to claim 1, wherein the second etching the hybrid hard mask includes etching with O₂ mixed with a halogen selected from the group consisting of Cl₂, HBr, and combinations thereof.

6. A method for etching a magnetic tunneling junction (MTJ) structure, the method comprising:

providing a MTJ stack on a substrate;

depositing a metal hard mask layer on the MTJ stack;

forming a hybrid hard mask on the metal hard mask layer, wherein the hybrid hard mask includes a plurality of spin-on carbon layers alternating with a plurality of spin-on silicon layers, wherein a topmost layer of the hybrid hard mask is a silicon layer;

forming a photo resist pattern on the hybrid hard mask, wherein the photo resist pattern has a first pattern size;

first etching the topmost silicon layer of the hybrid hard mask at portions thereof that are exposed by the photo resist pattern, wherein after the first etching, the photo resist pattern has a second pattern size smaller than said first pattern size;

thereafter second etching the hybrid hard mask at portions thereof that are exposed by the photo resist pattern, wherein the photoresist pattern is etched away, and wherein a remaining portion of the hybrid hard mask has a third pattern size smaller than the second pattern size; and

thereafter etching the metal hard mask and the MTJ stack at portions thereof that are exposed by the hybrid hard mask to form a MTJ device and overlying top electrode having a MTJ pattern size smaller than the third pattern size.

7. The method according to claim 6, wherein the metal hard mask layer includes a material selected from the group consisting of Ta, Ti, TaN, TiN, and combinations thereof, the metal hard mask layer having a first thickness of greater than or equal to 60 mm, wherein after the etching said MTJ stack, the metal hard mask layer forms a top electrode having a second thickness of greater than or equal to 50 nm and wherein the second thickness is no less than 80% of the first thickness.

8. The method according to claim 6, wherein the first etching the topmost second silicon layer includes etching with a plasma including CF₄, CHF₃ or C₄F₈.

9. The method according to claim 6, wherein the second etching the hybrid hard mask includes etching with O₂ mixed with a halogen gas, wherein the O₂ and the halogen gas are flowed at a rate from about 50 sccm to about 100 sccm, under a source power from 200 watts to 400 watts, and under a bias power from 20 watts to 100 watts.

10. The method according to claim 6, wherein the MTJ pattern size is from about 20 nm to 30 nm.

11. A method for etching a magnetic tunneling junction (MTJ) structure, the method comprising:

providing a MTJ stack on a substrate;

depositing a metal hard mask layer on the MTJ stack;

depositing a dielectric hard mask on the metal hard mask;

forming a hybrid hard mask on the metal hard mask layer, the forming the hybrid hard mask including;

spin-coating a first carbon layer;

spin-coating a first silicon layer on said first carbon layer;

spin-coating a second carbon layer on said first silicon layer; and

spin-coating a topmost silicon layer on said second carbon layer;

forming a photo resist pattern on the hybrid hard mask, wherein the photo resist pattern has a first pattern size;

first etching the topmost silicon layer of the hybrid hard mask where it is not covered by the photo resist pattern, wherein after the etching, the photo resist pattern and the topmost silicon layer have a second pattern size smaller than said first pattern size;

thereafter second etching remaining the hybrid hard mask, wherein after the second etching, the photo resist pattern has been removed and the hybrid hard mask has a third pattern size smaller than the second pattern size; and

thereafter etching the dielectric hard mask, the metal hard mask, and the MTJ stack where it is not covered by the hybrid hard mask to form a MTJ device and overlying top electrode having a MTJ pattern size smaller than the third pattern size.

12. The method according to claim 11, wherein the metal hard mask layer includes a material selected from the group consisting of Ta, Ti, TaN, Ti, TiN, and combinations thereof, the metal hard mask layer having a thickness of greater than or equal to 60 mm, and wherein the dielectric hard mask includes silicon oxynitride having a thickness from about 80 nm to 110 nm.

13. The method according to claim 11, wherein the first carbon layer has a thickness from about 100 nm to about 150 nm, the first silicon layer has a thickness from about 10 nm to about 15 nm, the second carbon layer has a thickness from about 100 nm to about 150 nm, and the topmost second silicon layer has a thickness from about 30 nm to about 60 nm.

14. The method according to claim 11, wherein the forming the hybrid hard mask further includes:

spin-coating a second silicon layer on the second carbon layer; and

spin-coating a third carbon layer on the second silicon layer;

wherein the topmost silicon layer is spin-coated on the third carbon layer.

15. The method according to claim 14, wherein the first, second, and third carbon layers have a thickness from about 100 nm to about 150 nm, the first silicon layer and the second silicon have a thickness from about 10 nm to about 15 nm, and the topmost silicon layer has a thickness from about 60 nm to about 100 nm.

16. The method according to claim 11, wherein the first etching the topmost second silicon layer includes etching with a plasma including CF₄, CHF₃ or C₄F₈.

17. The method according to claim 11, wherein the second etching the hybrid hard mask includes isotropically etching with O₂ mixed with a halogen including Cl₂, HBr, and combinations thereof, wherein the O₂ and the halogen are flowed at a rate from about 50 sccm to about 100 sccm, under a source power from 200 watts to 400 watts, and a bias power from 20 watts to 100 watts.

18. The method according to claim 11, wherein the first pattern size is from about 70 nm to about 80 nm, and the MTJ pattern size is from about 20 nm to about 30 nm.

19. The method according to claim 11, wherein after the etching the MTJ stack, the metal hard mask forms a top electrode having a thickness of greater than or equal to 50 nm.

20. The method according to claim 11, wherein after the etching the MTJ stack, the metal hard mask forms a top electrode having a thickness of greater than or equal to 80% of an as-deposited thickness of the metal hard mask.