Solar cell comprising an oxide-nanoparticle buffer layer and method of fabrication
First Claim
1. An optoelectronic device comprising:
- a substrate;
a first contact disposed on and in physical contact with the substrate;
a first layer comprising an organic material, the first layer being disposed on the first contact;
a second layer that is configured to protect the first layer during a sputter-deposition process, the second layer comprising a plurality of oxide nanoparticles, the oxide nanoparticles of the plurality thereof being characterized by a wide bandgap, the second layer being disposed on the first layer such that the first layer is between the second layer and the first contact; and
a first transparent conductive electrode disposed on the second layer, the first transparent conductive electrode comprising a sputter-deposited material;
wherein the second layer is between the first layer and the first transparent conductive electrode.
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Accused Products
Abstract
A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.
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Citations
20 Claims
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1. An optoelectronic device comprising:
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a substrate; a first contact disposed on and in physical contact with the substrate; a first layer comprising an organic material, the first layer being disposed on the first contact; a second layer that is configured to protect the first layer during a sputter-deposition process, the second layer comprising a plurality of oxide nanoparticles, the oxide nanoparticles of the plurality thereof being characterized by a wide bandgap, the second layer being disposed on the first layer such that the first layer is between the second layer and the first contact; and a first transparent conductive electrode disposed on the second layer, the first transparent conductive electrode comprising a sputter-deposited material; wherein the second layer is between the first layer and the first transparent conductive electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 15, 16, 17)
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9. An optoelectronic device comprising:
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a first layer comprising a first material, the first material comprising a first perovskite and having a first energy bandgap (EG), the first layer being disposed on a substrate; a first electrical contact disposed on the substrate, the first electrical contact being between the substrate and the first layer; a second electrical contact that is disposed on and in electrical communication with the first layer, the electrical contact being substantially transparent for a first light signal characterized by a first wavelength range, and the second electrical contact comprising a sputter-deposited material; a first carrier-transport layer that is disposed on and in physical contact with the first layer; and a buffer layer that is configured to protect the first layer during a sputter-deposition process, the buffer layer between the second electrical contact and the first carrier-transport layer, the buffer layer comprising plurality of oxide nanoparticles. - View Dependent Claims (10, 11, 12, 13, 14, 18, 19, 20)
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Specification