Laser devices using a semipolar plane
First Claim
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1. A method of operating a system comprising:
- in a lighting apparatus coupled to a laser device configured to provide light for the lighting apparatus, the laser device comprising;
a gallium and nitrogen containing material comprising a semipolar surface having an offcut orientation of between +/−
5 degrees toward a c-plane and between +/−
10 degrees toward an a-plane;
an n-type cladding region overlying the semipolar surface;
an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer region including;
a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum wells comprising InGaN and ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm;
ora double hetero-structure region ranging in thickness from 10 nm to 25 nm;
a p-type cladding region overlying the active region;
a conductive oxide overlying the p-type cladding region;
a laser stripe region comprising at least a portion of the p-type cladding region and the conductive oxide, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end;
a first facet having a first mirror surface provided on the first end of the laser stripe region;
a reflective coating provided on the first facet; and
a second facet having a second mirror surface provided on the second end of the laser stripe region, wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 560 nm;
emitting electromagnetic radiation with the peak wavelength of between 400 nm to 500 nm or between 500 nm and 560 nm.
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Abstract
An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
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Citations
13 Claims
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1. A method of operating a system comprising:
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in a lighting apparatus coupled to a laser device configured to provide light for the lighting apparatus, the laser device comprising; a gallium and nitrogen containing material comprising a semipolar surface having an offcut orientation of between +/−
5 degrees toward a c-plane and between +/−
10 degrees toward an a-plane;an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer region including;a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum wells comprising InGaN and ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm;
ora double hetero-structure region ranging in thickness from 10 nm to 25 nm; a p-type cladding region overlying the active region; a conductive oxide overlying the p-type cladding region; a laser stripe region comprising at least a portion of the p-type cladding region and the conductive oxide, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first facet having a first mirror surface provided on the first end of the laser stripe region; a reflective coating provided on the first facet; and a second facet having a second mirror surface provided on the second end of the laser stripe region, wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 560 nm; emitting electromagnetic radiation with the peak wavelength of between 400 nm to 500 nm or between 500 nm and 560 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for fabricating a lighting apparatus, the method comprising:
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processing a laser device by; providing a gallium and nitrogen containing material having a semipolar surface configured on one of either a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; forming an n-type cladding region overlying the semipolar surface; forming an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region; anddepositing a conductive oxide overlying the active region, the conductive oxide being formed from an electron cyclotron resonance deposition technique at a process temperature below 200°
C. to maintain a substantially crystalline characteristic of the active region to emit electromagnetic radiation within a desired electroluminescence efficiency, wherein the substrate contains a photoresist layer during deposition to provide a lift-off technique, the conductive oxide forming at least a part of a laser stripe region, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end;forming a first facet having a first mirror surface on the first end of the laser stripe region; forming a reflective coating on the first facet; and forming a second facet having a second mirror surface on the second end of the laser stripe region, wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or 500 nm and 580 nm; and packaging the laser device in the lighting apparatus. - View Dependent Claims (11, 12, 13)
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Specification