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Laser devices using a semipolar plane

  • US 10,522,976 B1
  • Filed: 08/30/2018
  • Issued: 12/31/2019
  • Est. Priority Date: 10/13/2011
  • Status: Active Grant
First Claim
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1. A method of operating a system comprising:

  • in a lighting apparatus coupled to a laser device configured to provide light for the lighting apparatus, the laser device comprising;

    a gallium and nitrogen containing material comprising a semipolar surface having an offcut orientation of between +/−

    5 degrees toward a c-plane and between +/−

    10 degrees toward an a-plane;

    an n-type cladding region overlying the semipolar surface;

    an active region comprising at least one light emitting active layer region overlying the n-type cladding region;

    the light emitting active layer region including;

    a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum wells comprising InGaN and ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm;

    ora double hetero-structure region ranging in thickness from 10 nm to 25 nm;

    a p-type cladding region overlying the active region;

    a conductive oxide overlying the p-type cladding region;

    a laser stripe region comprising at least a portion of the p-type cladding region and the conductive oxide, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end;

    a first facet having a first mirror surface provided on the first end of the laser stripe region;

    a reflective coating provided on the first facet; and

    a second facet having a second mirror surface provided on the second end of the laser stripe region, wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 560 nm;

    emitting electromagnetic radiation with the peak wavelength of between 400 nm to 500 nm or between 500 nm and 560 nm.

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