Dynamic high voltage (HV) level shifter with temperature compensation for high-side gate driver
First Claim
1. A level shifter circuit comprising:
- a transistor;
a first resistor electrically coupled from a first source/drain of the transistor to a power supply node; and
a second resistor electrically coupled from a second source/drain of the transistor to a reference node;
wherein the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material.
1 Assignment
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Accused Products
Abstract
Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.
11 Citations
20 Claims
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1. A level shifter circuit comprising:
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a transistor; a first resistor electrically coupled from a first source/drain of the transistor to a power supply node; and a second resistor electrically coupled from a second source/drain of the transistor to a reference node; wherein the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A gate driver circuit comprising:
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a level shifter comprising a transistor, a first resistor, and a second resistor, wherein the first resistor is electrically coupled from a first source/drain of the transistor to a dynamic power supply node, and wherein the second resistor is electrically coupled from a second source/drain of the transistor to a reference node; and a high-side gate driver comprising power terminals electrically coupled respectively to the dynamic power supply node and a dynamic return node, wherein the high-side gate driver is configured to be controlled by an output of the level shifter; wherein the transistor and the second resistor comprise individual portions of a group III-V heterojunction structure. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method comprising:
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providing a level shifter comprising a first resistor, a second resistor, and a transistor, wherein the first and second resistors are respectively electrically coupled to a source terminal of the transistor and a drain terminal of the transistor; applying a dynamic supply voltage across the level shifter, from a terminal of the first resistor to a terminal of the second resistor, wherein the dynamic supply voltage is generated using a bootstrap circuit and is in a dynamic voltage domain that alternates between a low voltage domain and a high voltage domain; applying an input signal to a gate of the transistor, wherein the input signal is in the low voltage domain; and generating an output signal from the input signal, wherein the output signal is generated at a node common to the first resistor and the transistor, and wherein the output signal is in the dynamic voltage domain; wherein the first and second resistors are two-dimensional electron gas (2DEG) resistors, and wherein the transistor is a high-electron-mobility transistor (HEMT). - View Dependent Claims (18, 19, 20)
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Specification