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Dynamic high voltage (HV) level shifter with temperature compensation for high-side gate driver

  • US 10,523,183 B2
  • Filed: 09/25/2018
  • Issued: 12/31/2019
  • Est. Priority Date: 01/31/2018
  • Status: Active Grant
First Claim
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1. A level shifter circuit comprising:

  • a transistor;

    a first resistor electrically coupled from a first source/drain of the transistor to a power supply node; and

    a second resistor electrically coupled from a second source/drain of the transistor to a reference node;

    wherein the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material.

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