Second order harmonic cancellation for radio frequency front-end switches

• US 10,523,264 B2
• Filed: 08/13/2018
• Issued: 12/31/2019
• Est. Priority Date: 05/08/2013
• Status: Active Grant

• Current Assignee: Skyworks Solutions Incorporated
• Original Assignee: Skyworks Solutions Incorporated
• Inventors: Zhao, Huan, Li, Qiang
• Primary Examiner(s): West, Lewis G
• Application Number:
  US16/102,133
• Publication Number:
  US 20190074861A1
• Time in Patent Office: 505 Days
• CPC Class Codes: H04B 1/48 in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter H04B1/46 takes precedence
• CPC Class Codes: H04B 2001/485 inhibiting unwanted transmission

Abstract

A radio frequency switch circuit with improved harmonic suppression and low insertion loss has an antenna port and a plurality of signal ports. A plurality of transistor switch circuits, are connected to a respective one of the plurality of signal ports and to the antenna port. Each of the transistor switch circuits has a transistor, which in an off state, together with a harmonic suppression capacitor and a parallel inductor both connected thereto, define a tank circuit that suppresses RF signals applied to the corresponding transistor switch circuit from a different one of the transistor switch circuits. The harmonic suppression capacitor is tuned to distribute large signal voltage swings in the RF signal amongst parasitic diodes of the transistor.

Claims

1. A radio frequency switch with a common pole and a plurality of throws, comprising:

a first switch circuit connected to the common pole and a first signal line, the first switch circuit being selectively activatable in response to a first enable signal applied to the first switch circuit, and including a first harmonic suppressor and a first inductive element defining a first tank circuit blocking radio frequency signals at the common pole from reaching a first one of the plurality of throws with the first switch circuit in a deactivated state; and

a second switch circuit connected to the common pole and a second signal line, the second switch circuit being selectively activatable in response to a second enable signal applied to the second switch circuit, and including a second harmonic suppressor and a second inductive element defining a second tank circuit blocking radio frequency signals at the common pole from reaching a second one of the plurality of throws with the second switch circuit in a deactivated state.

2. The radio frequency switch of claim 1, further comprising:

a third switch circuit connected to the common pole and a third signal line, the third switch circuit being selectively activatable in response to a third enable signal applied to the third switch circuit, and including a third harmonic suppressor and a third inductive element defining a third tank circuit blocking radio frequency signals at the common pole from reaching the third one of the plurality of throws with the third switch circuit in a deactivated state.

3. The radio frequency switch of claim 1 wherein the first harmonic suppressor and the second harmonic suppressor are capacitive elements.

4. The radio frequency switch of claim 1 further comprising a first switch activation suppressor connected to the first switch circuit and a second switch activation suppressor connected to the second switch circuit.

5. The radio frequency switch of claim 4 wherein the first switch activation suppressor and the second switch activation suppressor are capacitive elements.

6. The radio frequency switch of claim 4 wherein the first switch activation suppressor and the second switch activation suppressor are each tuned to maximize peak power handling capacity of a corresponding one of the first and second switch circuits.

7. The radio frequency switch of claim 1 wherein the first switch circuit includes a first direct current block and the second switch circuit includes a second direct current block.

8. The radio frequency switch of claim 1 wherein the first switch circuit and the second switch circuit each include a respective first and second transistor each with a gate, a drain, and a source.

9. The radio frequency switch of claim 8 wherein the first harmonic suppressor is tuned to distribute large signal voltage swings in the radio frequency signal amongst parasitic diodes of the first transistor, and the second harmonic suppressor is tuned to distribute large signal voltage swings in the radio frequency signal amongst parasitic diodes of the second transistor.

10. The radio frequency switch of claim 9 wherein one of the parasitic diodes of the first and second transistors is between the respective bodies and the drains thereof.

11. The radio frequency switch of claim 9 wherein one of the parasitic diodes of the first and second transistors is between the respective bodies and sources thereof.

12. The radio frequency switch of claim 8 wherein the first transistor and the second transistor each have an n-type metal oxide semiconductor (N-MOS) field effect structure.

13. A radio frequency switch with a common pole and a plurality of throws, comprising:

a plurality of switch circuits each corresponding to a respective of the plurality of throws, each of the switch circuits being connected to a signal line and an enable line and activatable in response to an enable signal applied to the enable line, each of the switch circuits further including a respective harmonic suppressor and inductor together defining respective tank circuits with the corresponding switch circuit being in a deactivated state that block radio frequency signals to the respective switch circuits.

14. The radio frequency switch of claim 13 wherein each of the plurality of switch circuits include a respective transistor each with a gate, a drain, and a source.

15. The radio frequency switch of claim 14 wherein the harmonic suppressors are tuned to distribute large signal voltage swings in an input signal across parasitic diodes of the corresponding one of the transistors of each of the plurality of switch circuits.

16. The radio frequency switch of claim 15 wherein the parasitic diodes in the transistors is between the body and the drain thereof.

17. The radio frequency switch of claim 15 wherein the parasitic diodes in the transistors is between the body and the source thereof.

18. A radio frequency switch element with a pole and throw, comprising:

a switch transistor defined by a source, a drain, and a gate, and having an activated state and a deactivated state, the drain being connected to the pole and the source being connected to the throw; and

a tank circuit connected across the switch transistor and blocking radio frequency signals on the drain with the switch transistor in the deactivated state.

19. The radio frequency switch element of claim 18 wherein the tank circuit includes a harmonic suppressor connected to the transistor and tuned to distribute large signal voltage swings in an input signal among parasitic diodes of the transistor.

20. The radio frequency switch element of claim 18 wherein the tank circuit includes an inductive element connected to the source and the drain.