Electric power conversion apparatus
First Claim
1. A power semiconductor module, comprising:
- a plurality of power semiconductor elements that includes a first IGBT, a second IGBT, a first diode, and a second diode;
a plurality of conducting plates on which a part of the plurality of power semiconductor elements is joined, the plurality of conducting plates including a first conducting plate and a second conducting plate; and
a plurality of terminals including a first DC terminal and a second DC terminal, which are connected with the first and second conducting plates, respectively, whereineach of the first conducting plate and the second conducting plate includes a main surface that is wider than other surfaces of the first and second conducting plates and a side surface that is narrower than the main surface, andwhen viewed from a direction perpendicular to the main surface of the first conducting plate and the second conducting plate, the first IGBT, the second IGBT, the first diode, and the second diode are arranged such thata first centerline passes through a center of the first IGBT and a center of the first diode,a second centerline passes through a center of the second IGBT and a center of the second diode,the first DC terminal is arranged between the first centerline and the second centerline, andthe second DC terminal is arranged so as to overlap with the second centerline and not to overlap with the first DC terminal.
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Accused Products
Abstract
An electric power conversion apparatus includes a channel case in which a cooling water channel is formed; a double side cooling semiconductor module that has an upper and lower arms series circuit of an inverter circuit; a capacitor module; a direct current connector; and an alternate current connector. The semiconductor module includes first and second heat dissipation metals whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit is disposed tightly between the first heat dissipation metal and the second heat dissipation metal, and the semiconductor module further includes a direct current positive terminal, a direct current negative terminal, and an alternate current terminal which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet to a cooling water outlet, and a first opening which opens into the cooling water channel.
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Citations
7 Claims
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1. A power semiconductor module, comprising:
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a plurality of power semiconductor elements that includes a first IGBT, a second IGBT, a first diode, and a second diode; a plurality of conducting plates on which a part of the plurality of power semiconductor elements is joined, the plurality of conducting plates including a first conducting plate and a second conducting plate; and a plurality of terminals including a first DC terminal and a second DC terminal, which are connected with the first and second conducting plates, respectively, wherein each of the first conducting plate and the second conducting plate includes a main surface that is wider than other surfaces of the first and second conducting plates and a side surface that is narrower than the main surface, and when viewed from a direction perpendicular to the main surface of the first conducting plate and the second conducting plate, the first IGBT, the second IGBT, the first diode, and the second diode are arranged such that a first centerline passes through a center of the first IGBT and a center of the first diode, a second centerline passes through a center of the second IGBT and a center of the second diode, the first DC terminal is arranged between the first centerline and the second centerline, and the second DC terminal is arranged so as to overlap with the second centerline and not to overlap with the first DC terminal. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification