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Electric power conversion apparatus

  • US 10,524,398 B2
  • Filed: 04/10/2017
  • Issued: 12/31/2019
  • Est. Priority Date: 03/11/2008
  • Status: Active Grant
First Claim
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1. A power semiconductor module, comprising:

  • a plurality of power semiconductor elements that includes a first IGBT, a second IGBT, a first diode, and a second diode;

    a plurality of conducting plates on which a part of the plurality of power semiconductor elements is joined, the plurality of conducting plates including a first conducting plate and a second conducting plate; and

    a plurality of terminals including a first DC terminal and a second DC terminal, which are connected with the first and second conducting plates, respectively, whereineach of the first conducting plate and the second conducting plate includes a main surface that is wider than other surfaces of the first and second conducting plates and a side surface that is narrower than the main surface, andwhen viewed from a direction perpendicular to the main surface of the first conducting plate and the second conducting plate, the first IGBT, the second IGBT, the first diode, and the second diode are arranged such thata first centerline passes through a center of the first IGBT and a center of the first diode,a second centerline passes through a center of the second IGBT and a center of the second diode,the first DC terminal is arranged between the first centerline and the second centerline, andthe second DC terminal is arranged so as to overlap with the second centerline and not to overlap with the first DC terminal.

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