Magnetic structure for metal plating control
First Claim
1. A system for promoting metal plating profile uniformity, comprising:
- a plating cell configured to contain a semiconductor wafer, wherein, when the semiconductor wafer is disposed within the plating cell, a bottom surface of the semiconductor wafer faces an anode;
a circular-shaped magnetic structure configured to modify at least one of an edge plating current or a center plating current associated with a metal plating process for the semiconductor wafer; and
a magnet movement component configured to modify a position of the circular-shaped magnetic structure from a first position to a second position with respect to the semiconductor wafer by moving the circular-shaped magnetic structure in a first direction and rotating the circular-shaped magnetic structure about an axis parallel to a diameter of the circular-shaped magnetic structure, wherein the circular-shaped magnetic structure is entirely disposed between a center of the semiconductor wafer and an edge of the semiconductor wafer when the circular-shaped magnetic structure is positioned at the second position.
1 Assignment
0 Petitions
Accused Products
Abstract
Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.
-
Citations
20 Claims
-
1. A system for promoting metal plating profile uniformity, comprising:
-
a plating cell configured to contain a semiconductor wafer, wherein, when the semiconductor wafer is disposed within the plating cell, a bottom surface of the semiconductor wafer faces an anode; a circular-shaped magnetic structure configured to modify at least one of an edge plating current or a center plating current associated with a metal plating process for the semiconductor wafer; and a magnet movement component configured to modify a position of the circular-shaped magnetic structure from a first position to a second position with respect to the semiconductor wafer by moving the circular-shaped magnetic structure in a first direction and rotating the circular-shaped magnetic structure about an axis parallel to a diameter of the circular-shaped magnetic structure, wherein the circular-shaped magnetic structure is entirely disposed between a center of the semiconductor wafer and an edge of the semiconductor wafer when the circular-shaped magnetic structure is positioned at the second position. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A system for promoting metal plating profile uniformity, comprising:
-
a plating cell configured to perform a metal plating process upon a semiconductor wafer, wherein when the semiconductor wafer is disposed within the plating cell, a bottom surface of the semiconductor wafer faces an anode; and a ring-shaped magnetic structure having a diameter that is less than a diameter of the semiconductor wafer, wherein the ring-shaped magnetic structure is configured to apply a force to at least one of; decrease an edge plating current associated with the metal plating process, or increase a center plating current associated with the metal plating process; and a magnet movement component configured to modify a position of the ring-shaped magnetic structure from a first position to a second position with respect to the semiconductor wafer by moving the ring-shaped magnetic structure in a first direction and rotating the ring-shaped magnetic structure about an axis parallel to the diameter of the ring-shaped magnetic structure, wherein the ring-shaped magnetic structure is entirely disposed between a center of the semiconductor wafer and an edge of the semiconductor wafer when the ring-shaped magnetic structure is positioned at the second position.
-
-
17. A system for promoting metal plating profile uniformity, comprising:
-
a metal plating cell configured to contain a semiconductor wafer having a first surface to be plated; a circular-shaped magnetic structure configured to generate a magnetic field that interacts with metal ions within the metal plating cell; and a magnet movement component configured to move the circular-shaped magnetic structure between a first position at which the circular-shaped magnetic structure is substantially centered over the semiconductor wafer to a second position at which the circular-shaped magnetic structure is entirely disposed between a center of the semiconductor wafer and an edge of the semiconductor wafer and to rotate the circular-shaped magnetic structure about an axis parallel to a diameter of the circular-shaped magnetic structure. - View Dependent Claims (18, 19, 20)
-
Specification