Display device
First Claim
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1. A display device comprising:
- a first semiconductor film;
a second semiconductor film;
a first conductive film;
a second conductive film;
a first insulating film between the first semiconductor film and the first conductive film and between the second semiconductor film and the second conductive film;
a first silicon nitride film over the first semiconductor film, the second semiconductor film, the first insulating film, the first conductive film, and the second conductive film;
an organic resin film over the first silicon nitride film;
a second silicon nitride film over the organic resin film; and
a first electrode over the second silicon nitride film,wherein the first semiconductor film and the first conductive film are provided in a pixel portion,wherein the second semiconductor film and the second conductive film are provided in a protective circuit,wherein the organic resin film overlaps with the first semiconductor film and the second conductive film,wherein each of the first conductive film and the second conductive film comprises a region serving as a gate electrode,wherein the first silicon nitride film comprises a first opening,wherein the organic resin film comprises a second opening,wherein the second silicon nitride film comprises a third opening,wherein the first opening and the second opening overlap each other,wherein the first opening and the third opening overlap each other,wherein the second opening and the third opening overlap each other,wherein an upper end portion of a side surface of the organic resin film is round at the second opening,wherein the second silicon nitride film covers a top surface and the side surface of the organic resin film,wherein the first silicon nitride film is in contact with the second silicon nitride film at the second opening,wherein the first electrode is electrically connected to the first semiconductor film via the first opening and the third opening,wherein the first electrode is in contact with a side surface of the first silicon nitride film at the first opening, andwherein the first electrode is in contact with a side surface of the second silicon nitride film at the third opening.
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Abstract
A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
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Citations
16 Claims
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1. A display device comprising:
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a first semiconductor film; a second semiconductor film; a first conductive film; a second conductive film; a first insulating film between the first semiconductor film and the first conductive film and between the second semiconductor film and the second conductive film; a first silicon nitride film over the first semiconductor film, the second semiconductor film, the first insulating film, the first conductive film, and the second conductive film; an organic resin film over the first silicon nitride film; a second silicon nitride film over the organic resin film; and a first electrode over the second silicon nitride film, wherein the first semiconductor film and the first conductive film are provided in a pixel portion, wherein the second semiconductor film and the second conductive film are provided in a protective circuit, wherein the organic resin film overlaps with the first semiconductor film and the second conductive film, wherein each of the first conductive film and the second conductive film comprises a region serving as a gate electrode, wherein the first silicon nitride film comprises a first opening, wherein the organic resin film comprises a second opening, wherein the second silicon nitride film comprises a third opening, wherein the first opening and the second opening overlap each other, wherein the first opening and the third opening overlap each other, wherein the second opening and the third opening overlap each other, wherein an upper end portion of a side surface of the organic resin film is round at the second opening, wherein the second silicon nitride film covers a top surface and the side surface of the organic resin film, wherein the first silicon nitride film is in contact with the second silicon nitride film at the second opening, wherein the first electrode is electrically connected to the first semiconductor film via the first opening and the third opening, wherein the first electrode is in contact with a side surface of the first silicon nitride film at the first opening, and wherein the first electrode is in contact with a side surface of the second silicon nitride film at the third opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A display device comprising:
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a first semiconductor film; a second semiconductor film; a first conductive film; a second conductive film; a first insulating film between the first semiconductor film and the first conductive film and between the second semiconductor film and the second conductive film; a first silicon nitride film over the first semiconductor film, the second semiconductor film, the first insulating film, the first conductive film, and the second conductive film; an organic resin film over the first silicon nitride film; a second silicon nitride film over the organic resin film; and a first electrode over the second silicon nitride film, wherein the first semiconductor film and the first conductive film are provided in a pixel portion, wherein the second semiconductor film and the second conductive film are provided in a portion other than the pixel portion, wherein the organic resin film overlaps with the first semiconductor film, wherein each of the first conductive film and the second conductive film comprises a region serving as a gate electrode, wherein the first silicon nitride film comprises a first opening, wherein the organic resin film comprises a second opening, wherein the second silicon nitride film comprises a third opening, wherein the first opening and the second opening overlap each other, wherein the first opening and the third opening overlap each other, wherein the second opening and the third opening overlap each other, wherein an upper end portion of a side surface of the organic resin film is round at the second opening, wherein the second silicon nitride film covers a top surface and the side surface of the organic resin film, wherein the first silicon nitride film is in contact with the second silicon nitride film at the second opening, wherein the first electrode is electrically connected to the first semiconductor film via the first opening and the third opening, wherein the first electrode is in contact with a side surface of the first silicon nitride film at the first opening, and wherein the first electrode is in contact with a side surface of the second silicon nitride film at the third opening. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Takayama, Toru, Murakami, Satoshi, Kimura, Hajime
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Primary Examiner(s)Nadav, Ori
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Application NumberUS16/192,844Publication NumberTime in Patent Office417 DaysField of Search257 59US Class CurrentCPC Class CodesG02F 1/133305 Flexible substrates, e.g. p...G02F 1/136277 formed on a semiconductor s...G02F 1/1368 in which the switching elem...H05B 33/04 Sealing arrangements , e.g....H10K 2102/3026 Top emissionH10K 50/84 Passivation; Containers; En...H10K 59/12 Active-matrix OLED [AMOLED]...H10K 59/1216 the pixel elements being ca...H10K 59/124 Insulating layers formed be...H10K 59/87 Passivation; Containers; En...
