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Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating

  • US 10,529,424 B2
  • Filed: 02/13/2019
  • Issued: 01/07/2020
  • Est. Priority Date: 10/13/2011
  • Status: Active Grant
First Claim
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1. A semiconductor memory array comprising:

  • a plurality of memory cells arranged in a matrix of rows and columns, wherein at least two of said memory cells each include;

    a bipolar device configured to store data when power is applied to said memory cell; and

    a non-volatile memory comprising a bipolar resistive change element;

    wherein said bipolar device is configured to be charged to a level indicative of a state of the memory cell based on resistivity of said bipolar resistive change element, upon restoration of power to said memory cell;

    wherein said array is configured to perform a restore operation in parallel on said at least two of said memory cells.

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