Cross-flow reactor and method

• US 10,529,542 B2
• Filed: 03/11/2015
• Issued: 01/07/2020
• Est. Priority Date: 03/11/2015
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holdings B.V.
• Inventors: White, Carl Louis, Shero, Eric James, Verghese, Mohith
• Primary Examiner(s): Zand, Kambiz
• Assistant Examiner(s): Javed, Mirza Israr
• Application Number:
  US14/645,234
• Publication Number:
  US 20160268102A1
• Time in Patent Office: 1,763 Days
• Field of Search: 118715, 118725
• CPC Class Codes: B08B 7/00 Cleaning by methods not provided for in a single other subclass or a single group in this subclass
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45557 Pulsed pressure or control pressure
• CPC Class Codes: C23C 16/4583 the substrate being supported substantially horizontally
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01J 37/32816 Pressure

Abstract

Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.

Claims

1. A gas-phase reactor comprising:

a susceptor configured to hold a substrate during processing;

a cross-flow reaction chamber comprising a tapered top surface and a bottom surface comprising a portion of a base plate and top surface of the susceptor;

a gas diffuser coupled to an inlet of the reaction chamber;

an exhaust conduit coupled to the outlet of the reaction chamber; and

a gap formed between the reaction chamber and a lower chamber and between the base plate and the susceptor, the gap comprising a vertical gap section and a plurality of horizontal gap sections.

2. The gas-phase reactor of claim 1, wherein a distance between the tapered top surface and the bottom surface is greater proximate the inlet relative to a distance between the tapered top surface and the bottom surface at the outlet.

3. The gas-phase reactor of claim 1, wherein a distance between the tapered top surface and the bottom surface is greater proximate the outlet relative to a distance between the tapered top surface and the bottom-surface at the inlet.

4. The gas-phase reactor of claim 1, wherein the tapered surface comprises a linearly tapered surface.

5. The gas-phase reactor of claim 1, wherein a distance between the tapered top surface and the bottom surface proximate the inlet ranges between about 1 mm and about 10 mm.

6. The gas-phase reactor of claim 1, wherein a distance between the tapered top surface and the bottom surface proximate the outlet ranges between about 1 mm and about 10 mm.

7. The gas-phase reactor of claim 1, further comprising at least one spacer between the susceptor and the base plate, wherein a portion of the at least one spacer resides within the susceptor.

8. The gas-phase reactor of claim 7, wherein the at least one spacer comprises a pin.

9. The gas-phase reactor of claim 1, further comprising another vertical gap section between the susceptor and the base plate.

10. The gas-phase reactor of claim 9, further comprising another horizontal gap section between the susceptor and the base plate.

11. A gas-phase reactor comprising:

a cross-flow reaction chamber comprising a top surface, a side surface, and a bottom surface, wherein a distance between the top surface and the bottom surface tapers from an inlet of the reaction chamber to an outlet of the reaction chamber;

a gas diffuser coupled to the inlet;

an exhaust coupled to the outlet;

a gap between the cross-flow reaction chamber and a susceptor configured to allow gas flow between the cross-flow reaction chamber and a lower chamber during substrate processing; and

a spacer defining a portion of the gap.

12. The gas-phase reactor of claim 11, wherein the gas-phase reactor comprises an atomic layer deposition reactor.

13. The gas-phase reactor of claim 11, wherein the bottom surface comprises a portion of a top surface of a susceptor and a portion of a base plate.

14. The gas-phase reactor of claim 13, wherein the gap comprises a horizontal gap section and a vertical gap section between the susceptor and the base plate.

15. The gas-phase reactor of claim 14, wherein the gap further comprises another vertical gap section and another horizontal gap section between the susceptor and the base plate.

16. The gas-phase reactor of claim 11, wherein the gap comprises a plurality of horizontal gap sections.

17. The gas-phase reactor of claim 11, wherein the top surface is tapered.

18. The gas-phase reactor of claim 11, wherein a distance between the tapered top surface and the bottom surface is greater proximate the inlet relative to a distance between the tapered top surface and bottom surface at the outlet.

19. The gas-phase reactor of claim 11, wherein a distance between the tapered top surface and bottom surface is greater proximate the outlet relative to a distance between the tapered top surface and the bottom surface at the inlet.

20. A gas-phase reactor system comprising:

a gas-phase reactor comprising a cross-flow reaction chamber, wherein a vertical height of the reaction chamber is tapered from an inlet to an outlet;

a lower chamber;

a gap between the reaction chamber and the lower chamber, wherein the gap comprises a plurality of horizontal gap sections and a plurality of vertical gap sections; and

a spacer defining a portion of the gap,

wherein the susceptor and the base plate are in direct contact.

21. The gas-phase reactor of claim 20, further comprising another spacer to define the gap.