Method for manufacturing a semiconductor device and a coating material

• US 10,529,552 B2
• Filed: 02/26/2018
• Issued: 01/07/2020
• Est. Priority Date: 11/29/2017
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chien, Yu-Ling Chang, Chen, Chien-Chih, Lin, Chin-Hsiang, Chang, Ching-Yu, Cheng, Yahru
• Primary Examiner(s): McCall-Shepard, Sonya D.
• Application Number:
  US15/905,501
• Publication Number:
  US 20190164746A1
• Time in Patent Office: 680 Days
• CPC Class Codes: C09D 125/06 Polystyrene
• CPC Class Codes: C09D 125/16 Homopolymers or copolymers of alkyl-substituted styrenes
• CPC Class Codes: C09D 125/18 Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
• CPC Class Codes: C09D 133/12 Homopolymers or copolymers of methyl methacrylate
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/31133 by chemical means
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/768 Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics

Abstract

In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.

Claims

1. A method of manufacturing a semiconductor device, the method comprising:

forming an underlying structure;

forming a surface grafting layer on the underlying structure; and

forming a photo resist layer on the surface grafting layer,

wherein the surface grafting layer includes a coating material comprising;

a backbone polymer;

a polarity switching unit coupled to the backbone polymer as a side chain;

a surface grafting unit coupled to an end of the backbone polymer; and

an adhesion unit different from the surface grafting unit and coupled to the backbone polymer as a side chain.

2. The method of claim 1, wherein the surface grafting unit includes one selected from the group consisting of —

OH, —

COOH, —

NH and —

SH.

3. The method of claim 2, wherein the adhesion unit is coupled to the backbone polymer as a side chain.

4. The method of claim 1, wherein the backbone polymer includes at least one selected from the group consisting of poly-methyl methacrylate (PMMA), polystyrene (PS) and polyhydroxystyrene (PHS).

5. The method of claim 1, wherein:

the photo resist layer includes a negative tone photo resist,

and

the polarity switching unit is at least one selected from the group consisting of t-BOC protected polyhydroxystyrene, methyl adamantyl methacrylate (MAdMA), ethyl adamantyl methacrylate (EAdMA) and propyl adamantyl methacrylate (PAdMA).

6. The method of claim 1, wherein the coating material further comprises an acidic component or an acid quencher coupled to the backbone polymer as a side chain.

11. The method of claim 3, wherein the adhesion unit includes one or more units selected from the group consisting of ketones, ethers, amides, carboxylic acids and alcohols.

12. The method of claim 1, wherein the coating material further comprises a surfactant.

7. A method of manufacturing a semiconductor device, the method comprising:

forming an underlying structure;

forming a first dielectric layer on the underlying structure;

forming an etch stop layer on the first dielectric layer, the etch stop layer including a silicon based material;

forming a second dielectric layer on the etch stop layer;

forming a surface grafting layer on the second dielectric layer; and

forming a photo resist layer on the surface grafting layer,

wherein the surface grafting layer includes a coating material comprising;

a backbone polymer;

a surface grafting unit coupled to an end of the backbone polymer; and

an adhesion unit different from the surface grafting unit and coupled to the backbone polymer as a side chain.

8. The method of claim 7, further comprising:

patterning the photo resist layer, thereby forming a resist pattern; and

etching the surface grafting layer and the etch stop layer by using the resist pattern as an etching mask.

9. The method of claim 7, wherein the silicon based material includes silicon oxide.

10. The method of claim 7, wherein a thickness of the surface grafting layer is in a range from 1 nm to 10 nm.

13. The method of claim 7, wherein the surface grafting unit includes one selected from the group consisting of —

NH, —

OH, —

SH and —

COOH.

14. The method of claim 7, wherein the adhesion unit is coupled to the backbone polymer as a side chain and includes one or more units selected from the group consisting of ketones, ethers, amides, carboxylic acids and alcohols.

15. The method of claim 7, wherein the backbone polymer includes at least one selected from the group consisting of poly-methyl methacrylate (PMMA), polystyrene (PS) and polyhydroxystyrene (PHS).

16. The method of claim 7, wherein the coating material further comprises a polarity switching unit coupled to the backbone polymer as a side chain,

wherein the polarity switching unit is at least one selected from the group consisting of t-BOC protected polyhydroxystyrene, methyl adamantyl methacrylate (MAdMA), ethyl adamantyl methacrylate (EAdMA) and propyl adamantyl methacrylate (PAdMA).

17. The method of claim 7, wherein the coating material further comprises an acidic component or an acid quencher coupled to the backbone polymer as a side chain.

18. The method of claim 7, wherein the coating material further comprises a surfactant.

19. A method of manufacturing a semiconductor device, the method comprising:

forming an underlying structure;

forming a first dielectric layer over the underlying structure;

forming a silicon nitride layer on the first dielectric layer;

forming a second dielectric layer on the silicon nitride layer;

forming a first hard mask layer on the second dielectric layer;

forming a bottom layer on the hard mask layer;

forming a middle layer on the bottom layer;

forming a surface grafting layer on the middle layer;

forming a photo resist layer on the surface grafting layer;

patterning the photo resist layer, thereby forming a resist pattern; and

etching the surface grafting layer and the middle layer by using the resist pattern as an etching mask,

wherein the surface grafting layer includes a coating material comprising;

a backbone polymer;

a surface grafting unit coupled to an end of the backbone polymer; and

an adhesion unit different from the surface grafting unit and coupled to the backbone polymer as a side chain.