Deposition method and method for manufacturing semiconductor device
First Claim
1. A semiconductor device comprising:
- an insulating layer over a substrate;
a source electrode or a drain electrode over the insulating layer;
an oxide layer over and in contact with a top surface of the source electrode or the drain electrode;
an oxide semiconductor layer over the oxide layer, the oxide semiconductor layer being in contact with a top surface and a side surface of the oxide layer, and a side surface of the source electrode or the drain electrode;
a gate insulating layer over the oxide semiconductor layer; and
a gate electrode over the gate insulating layer.
1 Assignment
0 Petitions
Accused Products
Abstract
An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.
146 Citations
13 Claims
-
1. A semiconductor device comprising:
-
an insulating layer over a substrate; a source electrode or a drain electrode over the insulating layer; an oxide layer over and in contact with a top surface of the source electrode or the drain electrode; an oxide semiconductor layer over the oxide layer, the oxide semiconductor layer being in contact with a top surface and a side surface of the oxide layer, and a side surface of the source electrode or the drain electrode; a gate insulating layer over the oxide semiconductor layer; and a gate electrode over the gate insulating layer. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A semiconductor device comprising:
-
a first electrode over a substrate; an insulating layer over the first electrode; a second electrode over the insulating layer; a first oxide layer over and in contact with a top surface of the second electrode; an oxide semiconductor layer over the first oxide layer, the oxide semiconductor layer being in contact with a top surface and a side surface of the first oxide layer, and a side surface of the second electrode; a second oxide layer over the oxide semiconductor layer; and a third electrode over the second oxide layer. - View Dependent Claims (8, 9, 10, 11, 12, 13)
-
Specification