Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
First Claim
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1. A method for forming a doped metal oxide film on a substrate by cyclical deposition, the method comprising:
- contacting the substrate with a first reactant comprising a metal halide source;
contacting the substrate with a second reactant comprising a hydrogenated source, wherein the hydrogenated source is a dopant precursor for the doped metal oxide film; and
contacting the substrate with a third reactant comprising an oxide source;
wherein the doped metal oxide film comprises between 2 atomic percent and 15 atomic percent of dopant.
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Abstract
Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.
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15 Claims
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1. A method for forming a doped metal oxide film on a substrate by cyclical deposition, the method comprising:
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contacting the substrate with a first reactant comprising a metal halide source; contacting the substrate with a second reactant comprising a hydrogenated source, wherein the hydrogenated source is a dopant precursor for the doped metal oxide film; and contacting the substrate with a third reactant comprising an oxide source; wherein the doped metal oxide film comprises between 2 atomic percent and 15 atomic percent of dopant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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