Semiconductor device
First Claim
1. A vertical transistor comprising:
- an active region of the vertical transistor formed in a semiconductor substrate of a first conductivity type, the active region comprising;
a base region of a second conductivity type,a first vertical gate trench adjacent to the base region, anda first gate electrode embedded entirely in the first vertical gate trench;
an edge termination region surrounding the active region, the edge termination region comprising;
a second vertical gate trench surrounding the active region around an outer periphery portion of the active region;
a second gate electrode embedded entirely in the second vertical gate trench;
a gate wiring layer formed overlying at least a portion of the active region and at least a portion of the edge termination region, the gate wiring layer electrically connecting the first gate electrode to the second gate electrode; and
a well region of the second conductivity type, the well region including at least a bottom portion of the second vertical gate trench and extending below the first vertical gate trench, the well region being deeper than the base region and having a dopant concentration that is higher than a dopant concentration of the base region.
1 Assignment
0 Petitions
Accused Products
Abstract
Machining accuracy of an IGBT region is worsened due to a height difference caused by polysilicon. Therefore, there is a problem that characteristic variation of the IGBT increases. Provided is a semiconductor device including a semiconductor substrate; a gate wiring layer provided on a front surface side of the semiconductor substrate; and a gate structure that includes a gate electrode and is provided on the front surface of the semiconductor substrate. The gate wiring layer includes an outer periphery portion that is a metal wiring layer and is provided along an outer periphery of the semiconductor substrate; and an extending portion that is a metal wiring layer, is provided extending from the outer periphery portion toward a central portion of the semiconductor substrate, and is electrically connected to the gate electrode.
9 Citations
12 Claims
-
1. A vertical transistor comprising:
-
an active region of the vertical transistor formed in a semiconductor substrate of a first conductivity type, the active region comprising; a base region of a second conductivity type, a first vertical gate trench adjacent to the base region, and a first gate electrode embedded entirely in the first vertical gate trench; an edge termination region surrounding the active region, the edge termination region comprising; a second vertical gate trench surrounding the active region around an outer periphery portion of the active region; a second gate electrode embedded entirely in the second vertical gate trench; a gate wiring layer formed overlying at least a portion of the active region and at least a portion of the edge termination region, the gate wiring layer electrically connecting the first gate electrode to the second gate electrode; and a well region of the second conductivity type, the well region including at least a bottom portion of the second vertical gate trench and extending below the first vertical gate trench, the well region being deeper than the base region and having a dopant concentration that is higher than a dopant concentration of the base region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A vertical transistor comprising:
-
an active region of the vertical transistor formed in a semiconductor substrate of a first conductivity type, the active region comprising; a base region of a second conductivity type, a first vertical gate trench adjacent to the base region, and a first gate electrode embedded entirely in the first vertical gate trench; an edge termination region surrounding the active region, the edge termination region comprising; a second vertical gate trench surrounding the active region around an outer periphery portion of the active region; a second gate electrode embedded entirely in the second vertical gate trench; a gate wiring layer formed overlying at least a portion of the active region and at least a portion of the edge termination region, the gate wiring layer electrically connecting the first gate electrode to the second gate electrode; and a dummy trench separated from the first vertical gate trench by the base region, wherein the dummy trench crosses below and orthogonally to a long direction of the gate wiring layer.
-
-
12. A vertical transistor comprising:
-
an active region of the vertical transistor formed in a semiconductor substrate of a first conductivity type, the active region comprising; a base region of a second conductivity type, a first vertical gate trench adjacent to the base region, and a first gate electrode embedded entirely in the first vertical gate trench; and an edge termination region surrounding the active region, the edge termination region comprising; a second vertical gate trench surrounding the active region around an outer periphery portion of the active region; a second gate electrode embedded entirely in the second vertical gate trench; and a gate wiring layer formed overlying at least a portion of the active region and at least a portion of the edge termination region, the gate wiring layer electrically connecting the first gate electrode to the second gate electrode, wherein an extending portion of the gate wiring layer is provided extending from one side of the outer periphery portion of the active region to another side of the outer periphery portion of the active region opposite the one side.
-
Specification