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Methods, apparatus, and system for forming epitaxial formations with reduced risk of merging

  • US 10,529,831 B1
  • Filed: 08/03/2018
  • Issued: 01/07/2020
  • Est. Priority Date: 08/03/2018
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a first fin and a second fin on the semiconductor substrate;

    a first epitaxial formation on the first fin and having an inner surface oriented toward the second fin and an outer surface oriented away from the second fin;

    a second epitaxial formation on the second fin and having an inner surface oriented toward the first fin and an outer surface oriented away from the first fin; and

    a conformal dielectric layer on at least portions of the inner and outer surfaces of the first epitaxial formation, on at least portions of the inner and outer surfaces of the first epitaxial formation and the second epitaxial formation, and merged between the inner surface of the first epitaxial formation and inner surface of the second epitaxial formation, wherein a top of the merged conformal dielectric layer between the inner surfaces of the first and second epitaxial formations is higher than a top of the conformal dielectric layer on the outer surfaces of the first and second epitaxial formations.

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