Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
First Claim
1. A light emitting device configured as a laser device, comprising:
- a semipolar III-nitride film including a light emitting device structure, wherein;
the light emitting device structure includes a semipolar III-nitride active region grown on or above a surface of a nitride substrate, the surface oriented at a crystal angle θ
from a c-plane of the nitride substrate, wherein 75°
≤
θ
<
90°
; and
an edge configured on the light emitting device structure for emission of light.
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Abstract
A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
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Citations
20 Claims
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1. A light emitting device configured as a laser device, comprising:
-
a semipolar III-nitride film including a light emitting device structure, wherein; the light emitting device structure includes a semipolar III-nitride active region grown on or above a surface of a nitride substrate, the surface oriented at a crystal angle θ
from a c-plane of the nitride substrate, wherein 75°
≤
θ
<
90°
; andan edge configured on the light emitting device structure for emission of light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for fabricating a laser device, comprising:
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growing a semipolar III-nitride film including a light emitting laser device structure, wherein; the light emitting laser device structure includes a semipolar III-nitride active region grown on or above a surface of a nitride substrate, and the surface is oriented at a crystal angle θ
from a c-plane of the nitride substrate,wherein 75°
≤
θ
<
90°
; andforming an edge on the laser device structure for emission of light. - View Dependent Claims (14, 15)
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16. A light emitting device configured as a laser device, comprising:
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a semipolar III-nitride film including a light emitting device structure, wherein; the light emitting device structure includes a semipolar III-nitride active region grown on or above a surface of a nitride layer on or above a foreign substrate, the surface oriented at a crystal angle θ
from a c-plane of the nitride substrate, wherein 75°
≤
θ
<
90°
; andan edge configured on the light emitting device structure for emission of light. - View Dependent Claims (17, 18, 19, 20)
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Specification