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Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

  • US 10,529,892 B2
  • Filed: 09/07/2017
  • Issued: 01/07/2020
  • Est. Priority Date: 06/01/2005
  • Status: Active Grant
First Claim
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1. A light emitting device configured as a laser device, comprising:

  • a semipolar III-nitride film including a light emitting device structure, wherein;

    the light emitting device structure includes a semipolar III-nitride active region grown on or above a surface of a nitride substrate, the surface oriented at a crystal angle θ

    from a c-plane of the nitride substrate, wherein 75°



    θ

    <

    90°

    ; and

    an edge configured on the light emitting device structure for emission of light.

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