Optoelectronic device and method for manufacturing the same

• US 10,529,893 B2
• Filed: 11/21/2017
• Issued: 01/07/2020
• Est. Priority Date: 07/03/2014
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Chen, Chao-Hsing, Wang, Jia-Kuen, Liao, Chien-Chih, Tseng, Tzu-Yao, Ko, Tsun-Kai, Shen, Chien-Fu
• Primary Examiner(s): Sarkar, Asok K
• Assistant Examiner(s): Withers, Grant S
• Application Number:
  US15/820,002
• Publication Number:
  US 20180076358A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.

Claims

1. An optoelectronic device, comprising:

a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides;

a second semiconductor layer formed on the first semiconductor layer;

a plurality of first conductive type electrodes formed on the first semiconductor layer;

a second conductive type electrode formed on the second semiconductor layer;

a third electrode covering the plurality of first conductive type electrodes; and

a fourth electrode covering the second conductive type electrode,

wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides,

wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, and the head portion comprises a width larger than that of the tail portion,

wherein the third electrode covers the one first part of the plurality of first conductive type electrodes and the head portion of the one fourth part of the plurality of first conductive type electrodes, and

wherein the tail portion of the one fourth part of the plurality of first conductive type electrodes is not covered by the third electrode and the fourth electrode.

2. The optoelectronic device of claim 1, wherein another first part of the plurality of first conductive type electrodes is formed on a corner constituted by another one of the two longer sides and the one of the two shorter sides.

3. The optoelectronic device of claim 1, wherein another fourth part of the plurality of first conductive type electrodes is formed along another one of the two longer sides.

4. The optoelectronic device of claim 3, wherein the fourth electrode is between the one fourth part of the plurality of first conductive type electrodes and the another fourth part of the plurality of first conductive type electrodes from a top view of the optoelectronic device.

5. The optoelectronic device of claim 1, wherein the third electrode is electrically connected to the plurality of first conductive type electrodes, and the fourth electrode is electrically connected to the second conductive type electrode.

6. The optoelectronic device of claim 1, wherein the third electrode and the fourth electrode are separated by a distance larger than 50 μ

m.

7. The optoelectronic device of claim 1, wherein the one first part of the plurality of first conductive type electrodes comprises a shape comprising polygon, circle, oval or semi-circle from the top view of the optoelectronic device.

8. The optoelectronic device of claim 1, further comprising an insulating layer formed on the plurality of first conductive type electrodes, wherein the insulating layer comprises a distributed bragg reflector (DBR) structure.

9. The optoelectronic device of claim 1, wherein from a cross-sectional view of the optoelectronic device, the third electrode comprises concave portions corresponding to the plurality of first conductive type electrodes.

10. The optoelectronic device of claim 1, wherein one side of the one first part of the plurality of first conductive type electrodes is not surrounded by the second semiconductor layer.

11. An optoelectronic device, comprising:

a substrate;

a first semiconductor layer comprising four boundaries;

a second semiconductor layer formed on the first semiconductor layer, wherein the first semiconductor layer is closer to the substrate than the second semiconductor layer is to the substrate;

a plurality of first conductive type electrodes formed on the first semiconductor layer; and

a third electrode electrically connected to the plurality of first conductive type electrodes,

wherein multiple first parts of the plurality of first conductive type electrodes are separated from each other along one side of the four boundaries,

wherein one side of each of the multiple first parts of the plurality of first conductive type electrodes is not surrounded by the second semiconductor layer,

wherein a second part of the plurality of first conductive type electrodes are surrounded by the second semiconductor layer, and

wherein the multiple first parts of the plurality of first conductive type electrodes are not covered by the third electrode, and the second part of the plurality of first conductive type electrodes is covered by the third electrode.

12. The optoelectronic device of claim 11, wherein the multiple first parts of the plurality of first conductive type electrodes comprises a shape comprising polygon, circle, oval or semi-circle from a top view of the optoelectronic device.

13. The optoelectronic device of claim 11, further comprising a third part of the plurality of first conductive type electrodes formed between the multiple first parts of the plurality of first conductive type electrodes, wherein distances between the third part of the plurality of first conductive type electrodes and each of the multiple first parts of the plurality of first conductive type electrodes are substantially the same.

14. The optoelectronic device of claim 11, further comprising an adjustment layer formed between the multiple first parts of the plurality of first conductive type electrodes and the third electrode, wherein the adjustment layer comprises a projected area on the first semiconductor layer, which is larger than a projected area of the third electrode on the first semiconductor layer.

15. The optoelectronic device of claim 14, further comprising a second conductive type electrode formed on the second semiconductor layer, and a fourth electrode electrically connected to the second conductive type electrode.