Optoelectronic semiconductor device

• US 10,529,895 B2
• Filed: 12/12/2017
• Issued: 01/07/2020
• Est. Priority Date: 02/21/2005
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Ko, Tsun-Kai, Hon, Schang-Jing, Chung, Chien-Kai, Yeh, Hui-Chun, Lin, An-Ju, Shen, Chien-Fu, Ou, Chen
• Primary Examiner(s): Reames, Matthew L
• Assistant Examiner(s): Liu, Benjamin T
• Application Number:
  US15/839,160
• Publication Number:
  US 20180114880A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.

Claims

1. An optoelectronic semiconductor device, comprising:

a substrate;

a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer in a top view of the semiconductor system, and part of the first conductivity layer is not covered by the second conductivity layer;

a first electrical connector on the first conductivity layer of the semiconductor system;

a second electrical connector directly on the second conductivity layer of the semiconductor system;

a contact layer comprising conductive oxide, contacting the top surface of the second conductivity layer and having an outer perimeter extending around an entire outer edge of the contact layer and being at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and

at least two discontinuous regions comprising insulator contacting the top surface of the second conductivity layer,

wherein the at least two discontinuous regions are formed on two sides of the second electrical connector, and the contact layer is between the second electrical connector and each one of the at least two discontinuous regions, and

wherein the second electrical connector electrically contacts the contact layer.

2. The optoelectronic semiconductor device of claim 1, wherein the shape of the second electrical connector is bilateral symmetry.

3. The optoelectronic semiconductor device of claim 1, wherein the second electrical connector comprises a root part and a branch part extending from the root part.

4. The optoelectronic semiconductor device of claim 3, wherein the second electrical connector comprises an end part diverged from the branch part.

5. The optoelectronic semiconductor device of claim 3, wherein the first electrical connector comprises a root part and a branch part extending from the root part.

6. The optoelectronic semiconductor device of claim 1, wherein the contact layer comprises an opening to accommodate the second electrical connector.

7. The optoelectronic semiconductor device of claim 1, wherein the at least two discontinuous regions each comprises a top view shape comprising circle, rectangle, rhombus, parallelogram, oblong, triangle, pentagon, hexagon or trapezoid.

8. The optoelectronic semiconductor device of claim 1, wherein the contact layer covers a top surface and sidewalls of each of the at least two discontinuous regions.

9. The optoelectronic semiconductor device of claim 1, wherein the second electrical connector comprises a plurality of root parts and a plurality of branch parts extending from each of the plurality of root parts.

10. The optoelectronic semiconductor device of claim 9, wherein the plurality of root parts is connected to each other.

11. The optoelectronic semiconductor device of claim 1, wherein the first electrical connector comprises a plurality of root parts and a plurality of branch parts extending from each of the plurality of root parts.

12. The optoelectronic semiconductor device of claim 11, wherein the plurality of root parts is separated from each other.

13. The optoelectronic semiconductor device of claim 1, wherein the outline of the first conductivity layer is separated from the outline of the second conductivity layer in the top view of the semiconductor system.

14. The optoelectronic semiconductor device of claim 13, wherein the outline of the first conductivity layer and the outline of the second conductivity layer respectively comprises multiple sides in the top view of the semiconductor system.

15. The optoelectronic semiconductor device of claim 1, wherein the substrate comprises germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), sapphire, silicon carbide (SiC), gallium nitride (GaN) or aluminum nitride (AlN).