Light emitting device and light emitting device package

• US 10,529,903 B2
• Filed: 11/29/2017
• Issued: 01/07/2020
• Est. Priority Date: 09/01/2011
• Status: Active Grant

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Matsui, Nobuaki, Obuchi, Hirotaka, Nakanishi, Yasuo, Tsutsumi, Kazuaki, Fujimori, Takao
• Primary Examiner(s): Eskridge, Cory W
• Application Number:
  US15/825,851
• Publication Number:
  US 20180083172A1
• Time in Patent Office: 769 Days
• Field of Search: None
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

Claims

1. A light emitting device, comprising:

a substrate having a front surface on which a plurality of protruding portions are formed;

a first semiconductor layer of a first conductivity type formed to cover the plurality of protruding portions;

a light emitting layer formed over the first semiconductor layer;

a first electrode formed over the first semiconductor layer, and not contacting the light emitting layer;

a second semiconductor layer of a second conductivity type formed over the light emitting layer; and

a second electrode formed over the second semiconductor layer,

wherein the plurality of protruding portions are made of a same material,

wherein a portion of the front surface of the substrate, which is located between the plurality of protruding portions, is flatter than surfaces of the plurality of protruding portions, and

wherein side surfaces of each of the plurality of protruding portions are concave in a cross-sectional view.

2. The light emitting device of claim 1, wherein the second electrode includes a first material which reflects a light emitted from the light emitting layer.

3. The light emitting device of claim 2, wherein the first material includes Ag, solder, or AuSn alloy.

4. The light emitting device of claim 1, wherein a distance between a surface of the first electrode furthest from the substrate and the front surface of the substrate is longer than a distance from a surface of the second semiconductor layer and the front surface of the substrate.

5. The light emitting device of claim 1, wherein at least a portion of a side surface of the first electrode faces at least a portion of a side surface of the second electrode.

6. The light emitting device of claim 1, further comprising a first conductive layer formed over a rear surface of the substrate, and made of a first material which reflects a light emitted from the light emitting layer.

7. The light emitting device of claim 6, wherein the first material includes ITO (Indium Tin Oxide) or ZnO (zinc oxide).

8. The light emitting device of claim 6, wherein the first conductive layer is formed to be located within a peripheral edge of the substrate in a direction perpendicular to the front surface of the substrate.

9. The light emitting device of claim 1, further comprising an external electrode which directly contacts the first electrode.

10. The light emitting device of claim 1, further comprising an external electrode which directly contacts the second electrode.

11. The light emitting device of claim 1, wherein a side surface of the first electrode extends along an entire side of the second semiconductor layer.

12. The light emitting device of claim 1, wherein a first distance between a surface of the first electrode furthest from the substrate and the front surface of the substrate is equal to a second distance between a surface of the second electrode furthest from the substrate and the front surface of the substrate.

13. The light emitting device of claim 1, further comprising a reflecting metal formed between the second semiconductor layer and the second electrode.

14. The light emitting device of claim 1, further comprising a transparent electrode layer formed between the second semiconductor layer and the second electrode.

15. The light emitting device of claim 1, wherein an angle of an inclination at a point of each side surface of the plurality of protruding portions becomes greater as the point becomes higher.

16. The light emitting device of claim 1, wherein each of the plurality of protruding portions includes a plurality of fine protruding portions, and

wherein the first semiconductor layer covers the plurality of protruding portions and spans between tops of the fine protruding portions to form spaces partitioned by the first semiconductor layer and the fine protruding portions.

17. The light emitting device of claim 1, wherein the second electrode is formed to overlap a portion of the light emitting layer.