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Low resistance vertical cavity light source with PNPN blocking

  • US 10,530,127 B2
  • Filed: 06/21/2018
  • Issued: 01/07/2020
  • Est. Priority Date: 07/13/2016
  • Status: Active Grant
First Claim
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1. A semiconductor vertical resonant cavity light source, comprising:

  • an upper p-type mirror (upper mirror) and a lower n-type mirror (low mirror);

    an active region for light generation between said upper mirror and said lower mirror;

    an inner mode confinement region and an outer current blocking region,wherein said outer current blocking region comprises a common epitaxial layer that includes an epitaxially regrown interface extending over said inner mode confinement region and over said outer current blocking region which is between said active region and said upper mirror; and

    a conducting channel comprising acceptor impurities in said inner mode confinement region of said common epitaxial layer,wherein said outer current blocking region provides a PNPN current blocking region comprising said upper mirror, a first impurity doped region comprising donor impurities between said epitaxially regrown interface and said active region, and a second impurity doped region comprising acceptor impurities between said first impurity doped region and said lower mirror, andwherein said first impurity doped region and said second impurity doped region force current flow into said conducting channel during normal operation of said light source.

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