Low resistance vertical cavity light source with PNPN blocking

• US 10,530,127 B2
• Filed: 06/21/2018
• Issued: 01/07/2020
• Est. Priority Date: 07/13/2016
• Status: Active Grant

• Current Assignee: Sdphotonics, LLC, University of Central Florida Research Foundation Inc. (State University System of Florida)
• Original Assignee: University of Central Florida Research Foundation Inc. (State University System of Florida)
• Inventors: Deppe, Dennis G.
• Primary Examiner(s): Park, Kinam
• Application Number:
  US16/014,305
• Publication Number:
  US 20190020176A1
• Time in Patent Office: 565 Days
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18322 Position of the structure
• CPC Class Codes: H01S 5/18327 Structure being part of a DBR H01S5/18391 takes precedence
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/2018 Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
• CPC Class Codes: H01S 5/2054 Methods of obtaining the confinement
• CPC Class Codes: H01S 5/2059 by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
• CPC Class Codes: H01S 5/3013 AIIIBV compounds
• CPC Class Codes: H01S 5/305 characterised by the doping materials used in the laser structure
• CPC Class Codes: H01S 5/3054 p-doping
• CPC Class Codes: H01S 5/3201 incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
• CPC Class Codes: H01S 5/323 in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Abstract

A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source.

Claims

1. A semiconductor vertical resonant cavity light source, comprising:

an upper p-type mirror (upper mirror) and a lower n-type mirror (low mirror);

an active region for light generation between said upper mirror and said lower mirror;

an inner mode confinement region and an outer current blocking region,

wherein said outer current blocking region comprises a common epitaxial layer that includes an epitaxially regrown interface extending over said inner mode confinement region and over said outer current blocking region which is between said active region and said upper mirror; and

a conducting channel comprising acceptor impurities in said inner mode confinement region of said common epitaxial layer,

wherein said outer current blocking region provides a PNPN current blocking region comprising said upper mirror, a first impurity doped region comprising donor impurities between said epitaxially regrown interface and said active region, and a second impurity doped region comprising acceptor impurities between said first impurity doped region and said lower mirror, and

wherein said first impurity doped region and said second impurity doped region force current flow into said conducting channel during normal operation of said light source.

2. The light source of claim 1, further comprising at least one cavity spacer layer between said upper mirror and said active region.

3. The light source of claim 2, wherein said conducting channel electrically contacts said cavity spacer layer.

4. The light source of claim 2, wherein said conducting channel extends into said cavity spacer layer.

5. The light source of claim 1, wherein said conducting channel extends into said active region.

6. The light source of claim 1, wherein said common epitaxial layer comprises a distributed Bragg reflector (DBR) layer.

7. The light source of claim 1, wherein said lower mirror includes an acceptor doped region.

8. The vertical cavity light source of claim 1, wherein said light source comprises a vertical-cavity surface-emitting laser (VCSEL).

9. The light source of claim 1, wherein said second impurity region is included in at least part of said active region.

10. The light source of claim 1, wherein said epitaxially regrown interface extending over said inner mode confinement region comprises a non-zero crystal surface step that provides optical mode confinement to said inner mode confinement region.

11. The light source of claim 1, further comprising a substrate comprising GaAs, GaN or InP that said light source is on.

12. The light source of claim 1, further comprising a half-wave cavity spacer between said upper mirror and said lower mirror, wherein said common epitaxial layer is configured in physical thickness to provide a resonance for said half-wave cavity spacer.

13. A semiconductor vertical resonant cavity light source, comprising:

an upper mirror and a lower mirror;

an active region for light generation between said upper mirror and said lower mirror;

an inner mode confinement region and an outer current blocking region,

wherein said outer current blocking region comprises a common epitaxial layer that includes an epitaxially regrown interface extending over said inner mode confinement region and over said outer current blocking region which is between said active region and said upper mirror;

an upper p-type layer above said epitaxially regrown interface;

a lower n-type layer below said active region; and

a conducting channel comprising acceptor impurities in said inner mode confinement region,

wherein said outer current blocking region provides a PNPN current blocking region comprising said upper p-type layer, a first impurity doped region comprising donor impurities between said epitaxially regrown interface and said active region, a second impurity doped region comprising acceptor impurities between said first impurity doped region and said lower n-type layer below said active region, and said lower n-type layer, and

wherein said first impurity doped region and said second impurity doped region force current flow into said conducting channel during normal operation of said light source.

14. The light source of claim 13, further comprising at least one cavity spacer layer between said upper mirror and said active region.

15. The light source of claim 13, wherein said conducting channel electrically contacts said cavity spacer layer.

16. The light source of claim 14, wherein said conducting channel extends into said cavity spacer layer.

17. The light source of claim 13, wherein said conducting channel extends into said active region.

18. The light source of claim 13, wherein said common epitaxial layer comprises a distributed Bragg reflector (DBR) layer.

19. The light source of claim 13, wherein said lower mirror includes an acceptor doped region.

20. The light source of claim 13, wherein said light source comprises a vertical-cavity surface-emitting laser (VCSEL).

21. The light source of claim 13, wherein said second impurity region is included in at least part of said active region.

22. The light source of claim 13, wherein said epitaxially regrown interface extending over said inner mode confinement region comprises a non-zero crystal surface step that provides optical mode confinement to said inner mode confinement region.

23. The light source of claim 13, further comprising a substrate comprising GaAs, GaN or InP that said light source is on.

24. The light source of claim 13, further comprising a half-wave cavity spacer between said upper mirror and said lower mirror, wherein said common epitaxial layer is configured in physical thickness to provide a resonance for said half-wave cavity spacer.