Double gate transistor device and method of operating
First Claim
Patent Images
1. A method comprising:
- switching on a transistor device by generating a first conducting channel by driving a first gate electrode at a first slew rate and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode at a second slew rate greater than the first slew rate,wherein the second gate electrode is adjacent the first gate electrode in a current flow direction of the transistor device, wherein driving the first gate electrode comprises increasing a first drive signal from a first off-level to a first on-level, wherein driving the second gate electrode comprises increasing a second drive signal from a second off-level to a second on-level, and wherein the second off-level is different from the first off-level.
1 Assignment
0 Petitions
Accused Products
Abstract
In accordance with an embodiment, a method includes switching on a transistor device by generating a first conducting channel by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode, wherein the second gate electrode is adjacent the first gate electrode in a current flow direction of the transistor device.
-
Citations
19 Claims
-
1. A method comprising:
-
switching on a transistor device by generating a first conducting channel by driving a first gate electrode at a first slew rate and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode at a second slew rate greater than the first slew rate, wherein the second gate electrode is adjacent the first gate electrode in a current flow direction of the transistor device, wherein driving the first gate electrode comprises increasing a first drive signal from a first off-level to a first on-level, wherein driving the second gate electrode comprises increasing a second drive signal from a second off-level to a second on-level, and wherein the second off-level is different from the first off-level. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A circuit comprising:
-
a transistor device configured to be switched on by generating a first conducting channel by driving a first gate electrode at a first slew rate, and before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode at a second slew rate greater than the first slew rate, wherein the second gate electrode is adjacent the first gate electrode in a current flow direction of the transistor device, wherein driving the first gate electrode comprises increasing a first drive signal from a first off-level to a first on-level, wherein driving the second gate electrode comprises increasing a second drive signal from a second off-level to a second on-level, and wherein the second off-level is different from the first off-level. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
-
Specification