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Double gate transistor device and method of operating

  • US 10,530,360 B2
  • Filed: 02/22/2017
  • Issued: 01/07/2020
  • Est. Priority Date: 02/29/2016
  • Status: Active Grant
First Claim
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1. A method comprising:

  • switching on a transistor device by generating a first conducting channel by driving a first gate electrode at a first slew rate and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode at a second slew rate greater than the first slew rate,wherein the second gate electrode is adjacent the first gate electrode in a current flow direction of the transistor device, wherein driving the first gate electrode comprises increasing a first drive signal from a first off-level to a first on-level, wherein driving the second gate electrode comprises increasing a second drive signal from a second off-level to a second on-level, and wherein the second off-level is different from the first off-level.

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