Printhead structure

• US 10,532,571 B2
• Filed: 03/12/2015
• Issued: 01/14/2020
• Est. Priority Date: 03/12/2015
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Chen, Zhizhang, Abbott, Jr., James Elmer, Cumbie, Michael W, Pugliese, Roberto A
• Primary Examiner(s): Polk, Sharon A.
• Application Number:
  US15/544,999
• Publication Number:
  US 20180001636A1
• Time in Patent Office: 1,769 Days
• CPC Class Codes: B41J 2/14024 Assembling head parts
• CPC Class Codes: B41J 2/14129 Layer structure
• CPC Class Codes: B41J 2/1603 of the front shooter type
• CPC Class Codes: B41J 2/1642 thin film formation by CVD [chemical vapor deposition]
• CPC Class Codes: B41J 2/1646 thin film formation by sputtering

Abstract

In one example, a printhead structure includes an ejector element, a multi-layer insulator covering the ejector element, and an amorphous metal on the insulator.

Claims

1. A printhead structure, comprising:

an ejector element;

a multi-layer insulator covering the ejector element; and

an amorphous metal on the insulator,

wherein the multi-layer insulator comprises;

a first insulator layer covering the ejector element; and

a second insulator layer covering the first insulator layer, wherein the first insulator layer is thicker than the second insulator layer.

2. The structure of claim 1, where the multi-layer insulator includes only:

the first insulator layer on the ejector element; and

the second insulator layer on the first insulator layer.

3. The structure of claim 2, where the amorphous metal on the insulator includes a single layer of amorphous metal on the second insulator.

4. The structure of claim 3, where:

the first and second insulator layers together are 50-150 nm thick; and

the amorphous metal layer is 50-100 nm thick.

5. The structure of claim 4, where the second insulator layer is 5-20 nm thick.

6. The structure of claim 1, where the amorphous metal includes:

5 atomic % to 90 atomic % of a metalloid, the metalloid being carbon, silicon, or boron;

5 atomic % to 90 atomic % of a first metal, the first metal being titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum;

5 atomic % to 90 atomic % of a second metal different from the first metal, the second metal being titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum; and

the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous metal.

7. The structure of claim 6, where the amorphous metal includes from 5 atomic % to 85 atomic % of a third metal different from the first and second metals, the third metal being titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum.

8. The structure of claim 6, where the amorphous metal has a surface RMS roughness less than 1 nm.

9. The printhead structure of claim 1, wherein the first insulator layer is a plasma enhance chemical vapor deposition layer and the second insulator layer is an atomic layer deposition layer.

16. The printhead structure of claim 1, wherein the single first insulator layer is a plasma enhance chemical vapor deposition layer and the single second insulator layer is an atomic layer deposition layer.

10. A printhead structure, comprising:

an ejector element to eject a liquid from a dispensing chamber;

multiple passivation layers covering the ejector element; and

an amorphous metal layer lining part of the dispensing chamber on an outermost passivation layer,

wherein the multiple passivation layers comprise;

a first passivation layer covering the ejector element; and

a second passivation layer covering the first passivation layer, wherein the first passivation layer is thicker than the second passivation layer.

11. The structure of claim 10, where:

the multiple passivation layers together are less than 150 nm thick; and

the amorphous metal layer is less than 100 nm thick.

12. The structure of claim 11, where:

the outermost passivation layer includes hafnium oxide and is less than 20 nm thick; and

the amorphous metal layer includes an alloy containing tantalum, tungsten and silicon and is less than 100 nm thick.

13. The printhead structure of claim 10, wherein the first passivation layer is a plasma enhance chemical vapor deposition layer and the second passivation layer is an atomic layer deposition layer.

14. A printhead structure, comprising:

a resistor;

a single first insulator layer on the resistor;

a single second insulator layer on the first insulator layer; and

a single amorphous metal layer on the second insulator layer,

wherein the single first insulator layer is thicker than the single second insulator layer.

15. The structure of claim 14, where:

the first insulator layer is a layer of silicon nitride;

the second insulator layer is a layer of hafnium oxide; and

the amorphous metal layer is a layer of an alloy of tantalum, tungsten and silicon.