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Semiconductor storage device

  • US 10,535,391 B2
  • Filed: 09/06/2018
  • Issued: 01/14/2020
  • Est. Priority Date: 03/13/2018
  • Status: Active Grant
First Claim
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1. A semiconductor storage device comprising:

  • a first memory cell and a second memory cell each of which includes a resistive change element and a selector;

    a first conductor electrically coupled to a first end of the first memory cell;

    a second conductor which electrically couples between a second end of the first memory cell and a first end of the second memory cell;

    a third conductor electrically coupled to a second end of the second memory cell;

    a first constant current source which is capable of coupling electrically to the first memory cell via the first conductor;

    a second constant current source which is capable of coupling electrically to the second memory cell via the third conductor;

    a first sense amplifier configured to read data from the first memory cell based on a current flowing from the first constant current source to the first memory cell; and

    a second sense amplifier configured to read data from the second memory cell based on a current flowing from the second memory cell to the second constant current source.

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