Method of producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
First Claim
1. A method of producing an optoelectronic semiconductor chip comprising in order:
- A) creating a nucleation layer on a sapphire growth substrate,B) applying a mask layer onto the nucleation layer and patterning the mask layer into a plurality of mask islands,C) growing a coalescence layer, wherein the coalescence layer is grown starting from regions of the nucleation layer not covered by the mask islands, the coalescence layer having a first main growth direction perpendicular to the nucleation layer so that ribs are formed, which when seen in a top view form a lattice and have trapezoidal cross-sectional surfaces,D) further growing the coalescence layer predominantly with a second main growth direction parallel to the nucleation layer to form a contiguous and continuous layer,E) growing a multiple quantum well structure on the coalescence layer,F) applying a mirror having metallic contact regions that impress current into the multiple quantum well structure and mirror islands for reflection of some radiation generated in the multiple quantum well structure, andG) detaching the growth substrate and the nucleation layer, and creating a roughening by etching the coalescence layer, wherein the mask layer serves as an etching mask,wherein the mirror islands comprises a transparent, dielectric material, andwherein the roughening remains in the optoelectronic semiconductor chip.
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Abstract
A method of producing an optoelectronic semiconductor chip includes in order: A) creating a nucleation layer on a growth substrate, B) applying a mask layer on to the nucleation layer, C) growing a coalescence layer, wherein the coalescence layer is grown starting from regions of the nucleation layer not covered by mask islands having a first main growth direction perpendicular to the nucleation layer so that ribs are formed, D) further growing the coalescence layer with a second main growth direction parallel to the nucleation layer to form a contiguous and continuous layer, E) growing a multiple quantum well structure on the coalescence layer, F) applying a mirror having metallic contact regions that impress current into the multiple quantum well structure and mirror islands for the total reflection of radiation generated in the multiple quantum well structure, and G) detaching the growth substrate and creating a roughening by etching.
43 Citations
13 Claims
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1. A method of producing an optoelectronic semiconductor chip comprising in order:
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A) creating a nucleation layer on a sapphire growth substrate, B) applying a mask layer onto the nucleation layer and patterning the mask layer into a plurality of mask islands, C) growing a coalescence layer, wherein the coalescence layer is grown starting from regions of the nucleation layer not covered by the mask islands, the coalescence layer having a first main growth direction perpendicular to the nucleation layer so that ribs are formed, which when seen in a top view form a lattice and have trapezoidal cross-sectional surfaces, D) further growing the coalescence layer predominantly with a second main growth direction parallel to the nucleation layer to form a contiguous and continuous layer, E) growing a multiple quantum well structure on the coalescence layer, F) applying a mirror having metallic contact regions that impress current into the multiple quantum well structure and mirror islands for reflection of some radiation generated in the multiple quantum well structure, and G) detaching the growth substrate and the nucleation layer, and creating a roughening by etching the coalescence layer, wherein the mask layer serves as an etching mask, wherein the mirror islands comprises a transparent, dielectric material, and wherein the roughening remains in the optoelectronic semiconductor chip. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of producing an optoelectronic semiconductor chip comprising in order:
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A) creating a nucleation layer on a sapphire growth substrate, B) applying a mask layer onto the nucleation layer and patterning the mask layer into a plurality of mask islands, C) growing a coalescence layer, wherein the coalescence layer is grown starting from regions of the nucleation layer not covered by the mask islands, the coalescence layer having a first main growth direction perpendicular to the nucleation layer so that ribs are formed, which when seen in a top view form a lattice and which have trapezoidal cross-sectional surfaces, D) further growing the coalescence layer predominantly with a second main growth direction parallel to the nucleation layer to form a contiguous and continuous layer, E) growing a multiple quantum well structure on the coalescence layer, F) applying a mirror having metallic contact regions that impress current into the multiple quantum well structure and mirror islands for reflection of some radiation generated in the multiple quantum well structure, and G) detaching the growth substrate and the nucleation layer, and creating a roughening by etching the coalescence layer, wherein the mask layer serves as an etching mask, and wherein the roughening remains in the optoelectronic semiconductor chip.
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Specification