Cell boundary structure for embedded memory
First Claim
1. An integrated circuit (IC) comprising:
- a substrate;
an isolation structure extending into a top surface of the substrate and comprising a dielectric material;
a plurality of dummy layers stacked on the isolation structure, wherein the dummy layers are different materials and collectively define a dummy sidewall;
a seal structure on the isolation structure and sealing the dummy sidewall, wherein a width of the seal structure decreases continuously from a bottom of the dummy sidewall to a top of the dummy sidewall; and
a pair of semiconductor devices on the substrate, wherein the isolation structure electrically separates the semiconductor devices from each other, and wherein the seal structure is level with the semiconductor devices.
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Abstract
Various embodiments of the present application are directed to a method for forming an embedded memory boundary structure with a boundary sidewall spacer. In some embodiments, an isolation structure is formed in a semiconductor substrate to separate a memory region from a logic region. A multilayer film is formed covering the semiconductor substrate. A memory structure is formed on the memory region from the multilayer film. An etch is performed into the multilayer film to remove the multilayer film from the logic region, such that the multilayer film at least partially defines a dummy sidewall on the isolation structure. A spacer layer is formed covering the memory structure, the isolation structure, and the logic region, and further lining the dummy sidewall. An etch is performed into the spacer layer to form a spacer on dummy sidewall from the spacer layer. A logic device structure is formed on the logic region.
15 Citations
20 Claims
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1. An integrated circuit (IC) comprising:
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a substrate; an isolation structure extending into a top surface of the substrate and comprising a dielectric material; a plurality of dummy layers stacked on the isolation structure, wherein the dummy layers are different materials and collectively define a dummy sidewall; a seal structure on the isolation structure and sealing the dummy sidewall, wherein a width of the seal structure decreases continuously from a bottom of the dummy sidewall to a top of the dummy sidewall; and a pair of semiconductor devices on the substrate, wherein the isolation structure electrically separates the semiconductor devices from each other, and wherein the seal structure is level with the semiconductor devices. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An integrated circuit (IC) comprising:
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a substrate; an isolation structure extending into a top surface of the substrate and comprising a dielectric material; a boundary structure overlying the isolation structure, wherein the boundary structure has a boundary sidewall; and a spacer structure overlying the isolation structure and lining the boundary sidewall, wherein the spacer structure and the isolation structure define a common sidewall on an opposite side of the spacer structure as the boundary structure, and wherein the common sidewall is smooth from top to bottom. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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16. An integrated circuit (IC) comprising:
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a substrate; a trench isolation structure extending into a top surface of the substrate and comprising a dielectric material; a nitride layer overlying the trench isolation structure; a doped polysilicon layer overlying the nitride layer; and a polysilicon spacer on the trench isolation structure and covering a sidewall of the doped polysilicon layer and a sidewall of the nitride layer. - View Dependent Claims (17, 18, 19, 20)
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Specification