Crystalline multilayer oxide thin films structure in semiconductor device

• US 10,535,728 B2
• Filed: 01/11/2019
• Issued: 01/14/2020
• Est. Priority Date: 03/31/2014
• Status: Active Grant

• Current Assignee: Filosofia Inc.
• Original Assignee: Filosofia Inc.
• Inventors: Hitora, Toshimi, Oda, Masaya
• Primary Examiner(s): Mazumder, Didarul A
• Application Number:
  US16/245,991
• Publication Number:
  US 20190148482A1
• Time in Patent Office: 368 Days
• Field of Search: 257 43, 438 85, 438 86, 438104, 438754
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/26 including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 , e.g. alloys
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 29/8611 Planar PN junction diodes
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

Claims

1. A corundum-structured crystalline oxide film comprising:

metal elements that comprise gallium (Ga),

wherein the corundum-structured crystalline oxide film has a thickness of 1 μ

m or more,

the corundum-structured crystalline oxide film has a surface roughness (Ra) of 0.1 μ

m or less, and

the corundum-structured crystalline oxide film has an atomic ratio of gallium (Ga) to all of the metal elements comprised in the corundum-structured crystalline oxide film to be 0.5 or more.

2. The corundum-structured crystalline oxide film of claim 1, wherein the corundum-structured crystalline oxide film has an electrical resistivity of 80 mΩ

cm or less.

3. The corundum-structured crystalline oxide film of claim 1, wherein the corundum-structured crystalline oxide film comprises a dopant.

4. The corundum-structured crystalline oxide film of claim 1, wherein the dopant has a concentration that is 1E15/cm³ to 1E20/cm³.

5. The corundum-structured crystalline oxide film of claim 3, wherein the dopant comprises at least one selected from Ge, Sn, Si, Ti, Zr, and Hf.

6. The corundum-structured crystalline oxide film of claim 3, wherein the corundum-structured crystalline oxide film is electrically conductive.

7. A semiconductor device comprising:

the corundum-structured crystalline oxide film of claim 3; and

an electrode that is electrically connected to the corundum-structured crystalline oxide film.

8. A corundum-structured crystalline oxide film comprising:

metal elements that comprise at least one metal element selected from among gallium, indium, aluminum, and iron,

wherein the corundum-structured crystalline oxide film has a thickness of 1 μ

m or more,

the corundum-structured crystalline oxide film has a surface roughness (Ra) of 0.1 μ

m or less,

the corundum-structured crystalline oxide film has an atomic ratio of a sum of at least one metal element selected from among gallium, indium, aluminum, and iron, and

the atomic ratio of the sum of the at least one metal element selected from among gallium, indium, aluminum, and iron to all of the metal elements comprised in the corundum-structured crystalline oxide film is 0.5 or more.

9. The corundum-structured crystalline oxide film of claim 8, wherein the corundum-structured crystalline oxide film has an electrical resistivity of 80 mΩ

cm or less.

10. The corundum-structured crystalline oxide film of claim 8, wherein the corundum-structured crystalline oxide film comprises a dopant.

11. The corundum-structured crystalline oxide film of claim 8, wherein the corundum-structured crystalline oxide film has an atomic ratio of gallium (Ga) to all of the metal elements comprised in the corundum-structured crystalline oxide film to be 0.5 or more.

12. The corundum-structured crystalline oxide film of claim 10, wherein the dopant comprises at least one selected from Ge, Sn, Si, Ti, Zr, and Hf.

13. The corundum-structured crystalline oxide film of claim 10, wherein the crystalline oxide film comprises a composition that is represented by In_XAl_YGa_ZFe_VO₃ (0≤

X≤

2.5, 0≤

Y≤

2.5, 0≤

Z≤

2.5, 0≤

V≤

2.5, X+Y+Z+V=1.5 to 2.5).

14. The corundum-structured crystalline oxide film of claim 13, wherein the composition comprised in the crystalline oxide film is 1≤

Z.

15. A semiconductor device comprising:

the corundum-structured crystalline oxide film of claim 10; and

an electrode that is electrically connected to the corundum-structured crystalline oxide film.

16. A corundum-structured crystalline oxide film comprising:

metal elements that comprise at least one metal selected from among gallium, indium, aluminum, and iron,

wherein the corundum-structured crystalline oxide film has a thickness of 1 μ

m or more,

the corundum-structured crystalline oxide film has an electrical resistivity of 80 mΩ

cm or less,

the corundum-structured crystalline oxide film has an atomic ratio of a sum of the at least one metal element selected from among gallium, indium, aluminum, and iron, and

the atomic ratio of the sum of the at least one metal element to all of the metal elements comprised in the corundum-structured crystalline oxide film is 0.5 or more.

17. The corundum-structured crystalline oxide film of claim 16, wherein the corundum-structured crystalline oxide film has a surface roughness (Ra) of 0.1 μ

m or less.

18. The corundum-structured crystalline oxide film of claim 16 further comprising:

a dopant that comprises at least one selected from Ge, Sn, Si, Ti, Zr, and Hf.

19. The corundum-structured crystalline oxide film of claim 16, wherein the corundum-structured crystalline oxide film has an atomic ratio of gallium (Ga) to all of the metal elements comprised in the corundum-structured crystalline oxide film to be 0.5 or more.

20. The corundum-structured crystalline oxide film of claim 16, wherein the corundum-structured crystalline oxide film is monocrystalline.

21. A semiconductor device comprising:

the corundum-structured crystalline oxide film of claim 18; and

an electrode that is electrically connected to the corundum-structured crystalline oxide film.

22. The corundum-structured crystalline oxide film of claim 16, wherein the crystalline oxide film comprises a composition that is represented by In_XAl_YGa_ZFe_VO₃ (0≤

X≤

2.5, 0≤

Y≤

2.5, 0≤

Z≤

2.5, 0≤

V≤

2.5, X+Y+Z+V=1.5 to 2.5).

23. The corundum-structured crystalline oxide film of claim 22, wherein the composition comprised in the crystalline oxide film is 1≤

Z.