Semiconductor structure and method of preparing semiconductor structure
First Claim
1. A semiconductor structure, characterized in that, the semiconductor structure includes:
- a substrate;
at least a periodic structure disposed above said substrate;
wherein the materials of said periodic structures are III-V group compounds, each said periodic structure includes at least one period, each said period includes a first periodic layer and a second periodic layer which are sequentially stacked in an epitaxial direction;
wherein said first periodic layer includes a first III group element, a second III group element and a first V group element, said second periodic layer includes said first III group element, said second III group element and said first V group element;
or, said first periodic layer includes said first III group element and said first V group element, said second periodic layer includes said first III group element, said second III group element and said first V group element;
wherein the atomic number of said first III element is smaller than the atomic number of said second III element;
wherein the thickness of the nth periodic structure is smaller than the thickness of the (n+1)th periodic structure, wherein n is an integer greater than or equal to 1.
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Abstract
The invention provides a semiconductor structure and a method of preparing a semiconductor structure, which solves the problems of easy cracking, large warpage and large dislocation density which exist in epitaxial growth of a semiconductor compound epitaxial structure on a substrate in the prior art. The semiconductor structure includes: a substrate; at least one periodic structure disposed over the substrate; wherein each of the periodic structures includes at least one period, each period including a first periodic layer and a second periodic layer which are sequentially stacked in an epitaxial direction; wherein the thickness of the nth periodic structure is smaller than the thickness of the (n+1)th periodic structure, wherein n is an integer greater than or equal to 1.
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Citations
10 Claims
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1. A semiconductor structure, characterized in that, the semiconductor structure includes:
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a substrate; at least a periodic structure disposed above said substrate; wherein the materials of said periodic structures are III-V group compounds, each said periodic structure includes at least one period, each said period includes a first periodic layer and a second periodic layer which are sequentially stacked in an epitaxial direction; wherein said first periodic layer includes a first III group element, a second III group element and a first V group element, said second periodic layer includes said first III group element, said second III group element and said first V group element;
or, said first periodic layer includes said first III group element and said first V group element, said second periodic layer includes said first III group element, said second III group element and said first V group element;
wherein the atomic number of said first III element is smaller than the atomic number of said second III element;wherein the thickness of the nth periodic structure is smaller than the thickness of the (n+1)th periodic structure, wherein n is an integer greater than or equal to 1. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of preparing a semiconductor structure, characterized in that, including:
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preparing at least one periodic structure over a substrate; wherein the materials of said periodic structures are III-V group compounds, each said periodic structure includes at least one period, each said period includes a first periodic layer and a second periodic layer which are sequentially stacked in an epitaxial direction;
wherein said first periodic layer includes a first III group element, a second III group element and a first V group element, said second periodic layer includes said first III group element, said second III group element and said first V group element;
or, said first periodic layer includes said first III group element and said first V group element, said second periodic layer includes said first III group element, said second III group element and said first V group element;
wherein the atomic number of said first III element is smaller than the atomic number of said second III element;
wherein the thickness of the nth periodic structure is smaller than the thickness of the (n+1)th periodic structure, wherein n is an integer greater than or equal to 1.
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Specification