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Selective silicon growth for gapfill improvement

  • US 10,535,751 B2
  • Filed: 05/30/2018
  • Issued: 01/14/2020
  • Est. Priority Date: 05/30/2018
  • Status: Active Grant
First Claim
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1. A method for semiconductor process, the method comprising:

  • forming fins on a substrate, sidewalls of the fins and a bottom surface defining a trench therebetween;

    filling the trench with a gate layer comprising performing a cyclic deposition-treatment process on the substrate in a processing chamber, the cyclic deposition-treatment process comprising;

    forming a first portion of the gate layer in the trench and along the sidewalls of the fins;

    forming respective passivation layers on the first portion of the gate layer formed at respective top portions of the fins; and

    forming a second portion of the gate layer on the first portion of the gate layer not covered by the passivation layer; and

    after the trenches are filled with the gate layer, patterning the gate layer to form a gate structure over the fins.

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