Device and fabrication of MOS device with island region
First Claim
1. A method of fabricating a semiconductor device, comprising:
- forming a first gate trench and a second gate trench in an epitaxial layer overlaying a semiconductor substrate;
depositing gate material in the first gate trench to form a first gate and depositing gate material in the second gate trench to form a second gate;
forming a body;
forming a source;
forming an active region contact trench that extends through the source and the body, and a gate contact trench within the second gate;
forming an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; and
disposing a first electrode within the active region contact trench and a second electrode within the gate contact trench.
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Abstract
Fabricating a semiconductor device includes: forming a first gate trench and a second gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the first gate trench to form a first gate and depositing gate material in the second gate trench to form a second gate; forming a body; forming a source; forming an active region contact trench that extends through the source and the body, and a gate contact trench within the second gate; forming an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; and disposing a first electrode within the active region contact trench and a second electrode within the gate contact trench.
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Citations
4 Claims
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1. A method of fabricating a semiconductor device, comprising:
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forming a first gate trench and a second gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the first gate trench to form a first gate and depositing gate material in the second gate trench to form a second gate; forming a body; forming a source; forming an active region contact trench that extends through the source and the body, and a gate contact trench within the second gate; forming an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; and disposing a first electrode within the active region contact trench and a second electrode within the gate contact trench. - View Dependent Claims (2, 3, 4)
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Specification