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Device and fabrication of MOS device with island region

  • US 10,535,764 B2
  • Filed: 07/31/2018
  • Issued: 01/14/2020
  • Est. Priority Date: 02/11/2005
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, comprising:

  • forming a first gate trench and a second gate trench in an epitaxial layer overlaying a semiconductor substrate;

    depositing gate material in the first gate trench to form a first gate and depositing gate material in the second gate trench to form a second gate;

    forming a body;

    forming a source;

    forming an active region contact trench that extends through the source and the body, and a gate contact trench within the second gate;

    forming an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; and

    disposing a first electrode within the active region contact trench and a second electrode within the gate contact trench.

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