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Power semiconductor device

  • US 10,535,765 B2
  • Filed: 08/31/2018
  • Issued: 01/14/2020
  • Est. Priority Date: 04/18/2018
  • Status: Active Grant
First Claim
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1. A power semiconductor device, comprising:

  • a substrate, having an active region and a terminal region, the terminal region surrounding the active region;

    a first epitaxial layer, disposed on the substrate in the active region and the terminal region; and

    a second epitaxial layer, disposed on the first epitaxial layer, wherein a doping concentration of the second epitaxial layer is greater than a doping concentration of the first epitaxial layer, wherein the second epitaxial layer comprises;

    a first termination trench, disposed in the terminal region and adjacent to the active region;

    a second termination trench, disposed in the terminal region; and

    a third termination trench, disposed in the terminal region, wherein the second termination trench is located between the first termination trench and the third termination trench, and the third termination trench has a third electrode electrically connected to a drain.

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