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Semiconductor device including an epitaxial layer wrapping around the nanowires

  • US 10,535,780 B2
  • Filed: 05/08/2017
  • Issued: 01/14/2020
  • Est. Priority Date: 05/08/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a multi-layer stack comprising a first nanowire and a second nanowire, wherein the first nanowire comprises first source/drain regions and a first channel region between the first source/drain regions, and the second nanowire comprises second source/drain regions and a second channel region between the second source/drain regions;

    an epitaxial layer wrapping around the first channel region of the first nanowire and the second channel region of the second nanowire, wherein the epitaxial layer has a portion between the first nanowire and the second nanowire and an inner surface in contact with the first channel region, and the epitaxial layer is in direct contact with an entirety of a topmost surface of the first channel region of the first nanowire; and

    a gate dielectric layer in contact with an outer surface of the epitaxial layer opposite to the inner surface of the epitaxial layer, wherein an interface between the gate dielectric layer and the outer surface of epitaxial layer is non-parallel with a sidewall of the first nanowire.

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