Semiconductor device including an epitaxial layer wrapping around the nanowires
First Claim
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1. A semiconductor device comprising:
- a multi-layer stack comprising a first nanowire and a second nanowire, wherein the first nanowire comprises first source/drain regions and a first channel region between the first source/drain regions, and the second nanowire comprises second source/drain regions and a second channel region between the second source/drain regions;
an epitaxial layer wrapping around the first channel region of the first nanowire and the second channel region of the second nanowire, wherein the epitaxial layer has a portion between the first nanowire and the second nanowire and an inner surface in contact with the first channel region, and the epitaxial layer is in direct contact with an entirety of a topmost surface of the first channel region of the first nanowire; and
a gate dielectric layer in contact with an outer surface of the epitaxial layer opposite to the inner surface of the epitaxial layer, wherein an interface between the gate dielectric layer and the outer surface of epitaxial layer is non-parallel with a sidewall of the first nanowire.
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Abstract
A multi-stack nanowire device includes a plurality of fins. Each of the fins has a multi-layer stack comprising a first nanowire and a second nanowire. A first portion of the first nanowire and second nanowire are doped to form source and drain regions. A second portion of the first nanowire and second nanowire is channel regions between the source and drain regions. An epitaxial layer wraps around the second portion of first nanowire and second nanowire. A gate is disposed over the second portion of the first nanowire and second nanowire. The epitaxial layer is interposed in between the first nanowire and the second nanowire over the channel region.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a multi-layer stack comprising a first nanowire and a second nanowire, wherein the first nanowire comprises first source/drain regions and a first channel region between the first source/drain regions, and the second nanowire comprises second source/drain regions and a second channel region between the second source/drain regions; an epitaxial layer wrapping around the first channel region of the first nanowire and the second channel region of the second nanowire, wherein the epitaxial layer has a portion between the first nanowire and the second nanowire and an inner surface in contact with the first channel region, and the epitaxial layer is in direct contact with an entirety of a topmost surface of the first channel region of the first nanowire; and a gate dielectric layer in contact with an outer surface of the epitaxial layer opposite to the inner surface of the epitaxial layer, wherein an interface between the gate dielectric layer and the outer surface of epitaxial layer is non-parallel with a sidewall of the first nanowire. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a plurality of nanowires each having source/drain regions and a channel region between the source/drain regions; a plurality of epitaxial layers respectively wrapping and directly contacting the channel regions of the nanowires, wherein the epitaxial layers are spaced apart, and an outer surface of at least one of the epitaxial layers is not conformal to an outer surface of at least one of the nanowires wrapped by the at least one of the epitaxial layers; and
a gate electrode disposed around the epitaxial layers. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A semiconductor device, comprising:
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a plurality of nanowires each having source/drain regions and a channel region between the source/drain regions; a plurality of epitaxial layers, each of which wraps and directly contacts a respective one of the channel regions of the nanowires, wherein each of the epitaxial layers comprises a tip and facets meeting at the tip, and the tips of an adjacent pair of the epitaxial layers are sandwiched between the adjacent pair of the epitaxy layers and are in contact with each other; a gate dielectric layer in contact with the tips of the adjacent pair of the epitaxial layers; and a gate electrode disposed around the gate dielectric layer and the epitaxial layers. - View Dependent Claims (18, 19, 20)
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Specification