Semiconductor light emitting device comprising finger electrodes

• US 10,535,798 B2
• Filed: 07/18/2013
• Issued: 01/14/2020
• Est. Priority Date: 07/18/2012
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Semicon Light Co., Ltd.
• Inventors: Jeon, Soo Kun, Park, Eun Hyun, Kim, Yong Deok
• Primary Examiner(s): Ahmadi, Mohsen
• Assistant Examiner(s): Roland, Christopher M
• Application Number:
  US14/118,599
• Publication Number:
  US 20140291714A1
• Time in Patent Office: 2,371 Days
• CPC Class Codes: H01L 2224/14 of a plurality of bump connectors
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials

Abstract

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer into a light of a second wavelength; and a non-conductive reflective film formed on the second semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the side of the growth substrate, with the non-conductive reflective film having a distributed bragg reflector designed based on the light converted by the phosphor part.

Claims

1. A semiconductor light emitting device comprising:

a plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light via electron-hole recombination, wherein a portion of the first semiconductor layer is exposed by etching the active layer and the second semiconductor layer;

a single non-conductive reflective film provided on the plurality of semiconductor layers for reflecting the light from the active layer towards the first semiconductor layer wherein the single non-conductive reflective film includes a distributed bragg reflector;

first and second electrodes provided on and in contact with the single non-conductive reflective film, and electrically connected with the plurality of semiconductor layers, the single non-conducive reflective film provided between the plurality of semiconductor layers and the first and second electrodes;

at least one finger electrode extended between the single non-conductive reflective film and the plurality of semiconductor layers;

an electrical connection passing through the single non-conductive reflective film and from the first electrode to said portion of the first semiconductor layer, the single non-conducive reflective film having a same height on both a side where the first electrode is provided and a side where the second electrode is provided;

an additional finger electrode electrically connected to the second electrode and extended between the single non-conductive reflective film and the second semiconductor layer; and

an additional electrical connection passing through the single non-conductive reflective film and from the second electrode to the additional finger electrode,

wherein the first semiconductor layer is provided opposite to the single non-conductive reflective film with respect to the second semiconductor layer,

wherein the at least one finger electrode is provided on the exposed portion of the first semiconductor layer where the second semiconductor layer and the active layer are removed,

wherein the at least one finger electrode is electrically connected to the first electrode,

wherein the at least one finger electrode is extended on the first semiconductor layer toward the second electrode,

wherein the at least one finger electrode and the portion of the first semiconductor layer are covered and contacted with the non-conductive reflective film,

wherein the first electrode in contact with the single non-conductive reflective film is positioned over an upper face of the single non-conductive reflective film with a portion of the second semiconductor layer located below the first electrode, while the at least one finger electrode extended on the first semiconductor layer toward the second electrode is not positioned over the second semiconductor layer, and

wherein the whole of the at least one finger electrode and the whole of the additional finger electrode are covered by the single non-conductive reflective film.

2. The semiconductor light emitting device claimed in claim 1, wherein the at least one finger electrode is extended under the second electrode and the additional finger electrode is extended under the first electrode.

3. The semiconductor light emitting device claimed in claim 1, wherein the at least one finger electrode is composed of two or more separate finger electrodes.

4. The semiconductor light emitting device claimed in claim 1, wherein the at least one finger electrode are composed of a plurality of finger electrodes which are extended along a lateral direction of the device.